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Chemical dissolution of indium arsenide in the Br₂-HBr solutions
The nature and kinetics of InAs chemical dissolution and chemical cutting, in the bromine solutions in hydrobromic acid have been investigated. It was shown that at low (up to 6 vol.%) bromine concentrations the InAs dissolution rate grows linearly with bromine concentration. Such solutions may be u...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/120255 |
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| Summary: | The nature and kinetics of InAs chemical dissolution and chemical cutting, in the bromine solutions in hydrobromic acid have been investigated. It was shown that at low (up to 6 vol.%) bromine concentrations the InAs dissolution rate grows linearly with bromine concentration. Such solutions may be used to chemically polish InAs. Solutions containing from 20 to 30 vol.% Br₂ in HBr dissolve InAs with the rate 25 to 50 µ/min forming polished surfaces with etch pits. Such solutions may be used to chemically cut indium arsenide. |
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