Chemical dissolution of indium arsenide in the Br₂-HBr solutions

The nature and kinetics of InAs chemical dissolution and chemical cutting, in the bromine solutions in hydrobromic acid have been investigated. It was shown that at low (up to 6 vol.%) bromine concentrations the InAs dissolution rate grows linearly with bromine concentration. Such solutions may be u...

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Дата:1999
Автори: Tomashik, Z.F., Danylenko, S.G., Tomashik, V.N., Kravetski, M.Yu.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/120255
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Chemical dissolution of indium arsenide in the Br₂-HBr solutions / Z.F. Tomashik, S.G. Danylenko, V.N. Tomashik, M.Yu. Kravetski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 73-75. — Бібліогр.: 10 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1202552017-06-12T03:04:45Z Chemical dissolution of indium arsenide in the Br₂-HBr solutions Tomashik, Z.F. Danylenko, S.G. Tomashik, V.N. Kravetski, M.Yu. The nature and kinetics of InAs chemical dissolution and chemical cutting, in the bromine solutions in hydrobromic acid have been investigated. It was shown that at low (up to 6 vol.%) bromine concentrations the InAs dissolution rate grows linearly with bromine concentration. Such solutions may be used to chemically polish InAs. Solutions containing from 20 to 30 vol.% Br₂ in HBr dissolve InAs with the rate 25 to 50 µ/min forming polished surfaces with etch pits. Such solutions may be used to chemically cut indium arsenide. 1999 Article Chemical dissolution of indium arsenide in the Br₂-HBr solutions / Z.F. Tomashik, S.G. Danylenko, V.N. Tomashik, M.Yu. Kravetski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 73-75. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 81,65 C. http://dspace.nbuv.gov.ua/handle/123456789/120255 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The nature and kinetics of InAs chemical dissolution and chemical cutting, in the bromine solutions in hydrobromic acid have been investigated. It was shown that at low (up to 6 vol.%) bromine concentrations the InAs dissolution rate grows linearly with bromine concentration. Such solutions may be used to chemically polish InAs. Solutions containing from 20 to 30 vol.% Br₂ in HBr dissolve InAs with the rate 25 to 50 µ/min forming polished surfaces with etch pits. Such solutions may be used to chemically cut indium arsenide.
format Article
author Tomashik, Z.F.
Danylenko, S.G.
Tomashik, V.N.
Kravetski, M.Yu.
spellingShingle Tomashik, Z.F.
Danylenko, S.G.
Tomashik, V.N.
Kravetski, M.Yu.
Chemical dissolution of indium arsenide in the Br₂-HBr solutions
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Tomashik, Z.F.
Danylenko, S.G.
Tomashik, V.N.
Kravetski, M.Yu.
author_sort Tomashik, Z.F.
title Chemical dissolution of indium arsenide in the Br₂-HBr solutions
title_short Chemical dissolution of indium arsenide in the Br₂-HBr solutions
title_full Chemical dissolution of indium arsenide in the Br₂-HBr solutions
title_fullStr Chemical dissolution of indium arsenide in the Br₂-HBr solutions
title_full_unstemmed Chemical dissolution of indium arsenide in the Br₂-HBr solutions
title_sort chemical dissolution of indium arsenide in the br₂-hbr solutions
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 1999
url http://dspace.nbuv.gov.ua/handle/123456789/120255
citation_txt Chemical dissolution of indium arsenide in the Br₂-HBr solutions / Z.F. Tomashik, S.G. Danylenko, V.N. Tomashik, M.Yu. Kravetski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 73-75. — Бібліогр.: 10 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:36:36Z
last_indexed 2023-10-18T20:36:36Z
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