Chemical dissolution of indium arsenide in the Br₂-HBr solutions
The nature and kinetics of InAs chemical dissolution and chemical cutting, in the bromine solutions in hydrobromic acid have been investigated. It was shown that at low (up to 6 vol.%) bromine concentrations the InAs dissolution rate grows linearly with bromine concentration. Such solutions may be u...
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Дата: | 1999 |
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Автори: | , , , |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120255 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Chemical dissolution of indium arsenide in the Br₂-HBr solutions / Z.F. Tomashik, S.G. Danylenko, V.N. Tomashik, M.Yu. Kravetski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 73-75. — Бібліогр.: 10 назв. — англ. |
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irk-123456789-1202552017-06-12T03:04:45Z Chemical dissolution of indium arsenide in the Br₂-HBr solutions Tomashik, Z.F. Danylenko, S.G. Tomashik, V.N. Kravetski, M.Yu. The nature and kinetics of InAs chemical dissolution and chemical cutting, in the bromine solutions in hydrobromic acid have been investigated. It was shown that at low (up to 6 vol.%) bromine concentrations the InAs dissolution rate grows linearly with bromine concentration. Such solutions may be used to chemically polish InAs. Solutions containing from 20 to 30 vol.% Br₂ in HBr dissolve InAs with the rate 25 to 50 µ/min forming polished surfaces with etch pits. Such solutions may be used to chemically cut indium arsenide. 1999 Article Chemical dissolution of indium arsenide in the Br₂-HBr solutions / Z.F. Tomashik, S.G. Danylenko, V.N. Tomashik, M.Yu. Kravetski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 73-75. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 81,65 C. http://dspace.nbuv.gov.ua/handle/123456789/120255 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
language |
English |
description |
The nature and kinetics of InAs chemical dissolution and chemical cutting, in the bromine solutions in hydrobromic acid have been investigated. It was shown that at low (up to 6 vol.%) bromine concentrations the InAs dissolution rate grows linearly with bromine concentration. Such solutions may be used to chemically polish InAs. Solutions containing from 20 to 30 vol.% Br₂ in HBr dissolve InAs with the rate 25 to 50 µ/min forming polished surfaces with etch pits. Such solutions may be used to chemically cut indium arsenide. |
format |
Article |
author |
Tomashik, Z.F. Danylenko, S.G. Tomashik, V.N. Kravetski, M.Yu. |
spellingShingle |
Tomashik, Z.F. Danylenko, S.G. Tomashik, V.N. Kravetski, M.Yu. Chemical dissolution of indium arsenide in the Br₂-HBr solutions Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Tomashik, Z.F. Danylenko, S.G. Tomashik, V.N. Kravetski, M.Yu. |
author_sort |
Tomashik, Z.F. |
title |
Chemical dissolution of indium arsenide in the Br₂-HBr solutions |
title_short |
Chemical dissolution of indium arsenide in the Br₂-HBr solutions |
title_full |
Chemical dissolution of indium arsenide in the Br₂-HBr solutions |
title_fullStr |
Chemical dissolution of indium arsenide in the Br₂-HBr solutions |
title_full_unstemmed |
Chemical dissolution of indium arsenide in the Br₂-HBr solutions |
title_sort |
chemical dissolution of indium arsenide in the br₂-hbr solutions |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
1999 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/120255 |
citation_txt |
Chemical dissolution of indium arsenide in the Br₂-HBr solutions / Z.F. Tomashik, S.G. Danylenko, V.N. Tomashik, M.Yu. Kravetski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 73-75. — Бібліогр.: 10 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
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first_indexed |
2023-10-18T20:36:36Z |
last_indexed |
2023-10-18T20:36:36Z |
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1796150651776925696 |