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Conductivity of the Bi₁₂SiO₂₀ thin films

Conductivity of the Bi₁₂SiO₂₀ thin films

The results of the conductivity examination in the Bi₁₂SiO₂₀ thin films prepared using the sol-gel method are presented. The conductivity was investigated in the 300–550 K temperature and up to 100 V/cm field ranges. It was observed that the charge carrier transfer at the flow level, situated in the...

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Bibliographic Details
Main Authors: Plyaka, S.N., Sokolyanskii, G.Ch., Klebanskii, E.O., Sadovskaya, L.Ja.
Format: Article
Language:English
Published: Інститут фізики конденсованих систем НАН України 1999
Series:Condensed Matter Physics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/120588
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http://dspace.nbuv.gov.ua/handle/123456789/120588

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