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Conductivity of the Bi₁₂SiO₂₀ thin films

Conductivity of the Bi₁₂SiO₂₀ thin films

The results of the conductivity examination in the Bi₁₂SiO₂₀ thin films prepared using the sol-gel method are presented. The conductivity was investigated in the 300–550 K temperature and up to 100 V/cm field ranges. It was observed that the charge carrier transfer at the flow level, situated in the...

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Bibliographic Details
Main Authors: Plyaka, S.N., Sokolyanskii, G.Ch., Klebanskii, E.O., Sadovskaya, L.Ja.
Format: Article
Language:English
Published: Інститут фізики конденсованих систем НАН України 1999
Series:Condensed Matter Physics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/120588
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Summary:The results of the conductivity examination in the Bi₁₂SiO₂₀ thin films prepared using the sol-gel method are presented. The conductivity was investigated in the 300–550 K temperature and up to 100 V/cm field ranges. It was observed that the charge carrier transfer at the flow level, situated in the tail of the density of states into the forbidden band is dominant for the investigated sample at T > 500 K. The obtained results are explained in terms of the highly compensated doped semiconductor model.

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