Conductivity of the Bi₁₂SiO₂₀ thin films
The results of the conductivity examination in the Bi₁₂SiO₂₀ thin films prepared using the sol-gel method are presented. The conductivity was investigated in the 300–550 K temperature and up to 100 V/cm field ranges. It was observed that the charge carrier transfer at the flow level, situated in the...
Збережено в:
| Дата: | 1999 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики конденсованих систем НАН України
1999
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| Назва видання: | Condensed Matter Physics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120588 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Conductivity of the Bi₁₂SiO₂₀ thin films / S.N. Plyaka, G.Ch. Sokolyanskii, E.O. Klebanskii, L.Ja. Sadovskaya // Condensed Matter Physics. — 1999. — Т. 2, № 4(20). — С. 625-630. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The results of the conductivity examination in the Bi₁₂SiO₂₀ thin films prepared using the sol-gel method are presented. The conductivity was investigated in the 300–550 K temperature and up to 100 V/cm field ranges. It
was observed that the charge carrier transfer at the flow level, situated in
the tail of the density of states into the forbidden band is dominant for the
investigated sample at T > 500 K. The obtained results are explained in
terms of the highly compensated doped semiconductor model. |
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