Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs
Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise equivalent power (NEP) of these detectors was ~ 10⁻¹⁰ W/Hz¹/² in the observed radia...
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| Дата: | 2015 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120648 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs / A.G. Golenkov, K.S. Zhuravlev, J.V. Gumenjuk-Sichevska, I.O. Lysiuk, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 40-45. — Бібліогр.: 21 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1206482017-06-13T03:03:45Z Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs Golenkov, A.G. Zhuravlev, K.S. Gumenjuk-Sichevska, J.V. Lysiuk, I.O. Sizov, F.F. Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise equivalent power (NEP) of these detectors was ~ 10⁻¹⁰ W/Hz¹/² in the observed radiation frequency range at ambient temperatures. It has been shown that the ultimate value for the AlGaN/GaN HFET detectors (in 0.25-μm technology) can reach NEPopt ≈ 6•10⁻¹² W/Hz¹/² , and it is 3-fold lower than that for Si MOSFET (in 0.35-μm technology). 2015 Article Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs / A.G. Golenkov, K.S. Zhuravlev, J.V. Gumenjuk-Sichevska, I.O. Lysiuk, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 40-45. — Бібліогр.: 21 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.01.040 PACS 07.57.Kp, 73.40.-c, 85.30.Tv http://dspace.nbuv.gov.ua/handle/123456789/120648 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise equivalent power (NEP) of these detectors was ~ 10⁻¹⁰ W/Hz¹/² in the observed radiation frequency range at ambient temperatures. It has been shown that the ultimate value for the AlGaN/GaN HFET detectors (in 0.25-μm technology) can reach NEPopt ≈ 6•10⁻¹² W/Hz¹/² , and it is 3-fold lower than that for Si MOSFET (in 0.35-μm technology). |
| format |
Article |
| author |
Golenkov, A.G. Zhuravlev, K.S. Gumenjuk-Sichevska, J.V. Lysiuk, I.O. Sizov, F.F. |
| spellingShingle |
Golenkov, A.G. Zhuravlev, K.S. Gumenjuk-Sichevska, J.V. Lysiuk, I.O. Sizov, F.F. Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Golenkov, A.G. Zhuravlev, K.S. Gumenjuk-Sichevska, J.V. Lysiuk, I.O. Sizov, F.F. |
| author_sort |
Golenkov, A.G. |
| title |
Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs |
| title_short |
Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs |
| title_full |
Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs |
| title_fullStr |
Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs |
| title_full_unstemmed |
Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs |
| title_sort |
sub-thz nonresonant detection in algan/gan heterojunction fets |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2015 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120648 |
| citation_txt |
Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs / A.G. Golenkov, K.S. Zhuravlev, J.V. Gumenjuk-Sichevska, I.O. Lysiuk, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 40-45. — Бібліогр.: 21 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:37:40Z |
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