Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings
Features of changes in the electrophysical parameters (concentrations of charge carriers ne and their mobilities μ ) in heavily doped n-Ge <As> single crystals, which occur as a result of the series of thermoannealings (each for 0.5 h) over a wide temperature range (540 ≤T≤ 900 °C), have been...
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| Дата: | 2015 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120727 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 53-56. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-120727 |
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dspace |
| spelling |
irk-123456789-1207272017-06-13T03:04:56Z Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings Gaidar, G.P. Features of changes in the electrophysical parameters (concentrations of charge carriers ne and their mobilities μ ) in heavily doped n-Ge <As> single crystals, which occur as a result of the series of thermoannealings (each for 0.5 h) over a wide temperature range (540 ≤T≤ 900 °C), have been investigated and explained. 2015 Article Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 53-56. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 61.82.Fk http://dspace.nbuv.gov.ua/handle/123456789/120727 DOI: 10.15407/spqeo18.01.053 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Features of changes in the electrophysical parameters (concentrations of charge carriers ne and their mobilities μ ) in heavily doped n-Ge <As> single crystals, which occur as a result of the series of thermoannealings (each for 0.5 h) over a wide temperature range (540 ≤T≤ 900 °C), have been investigated and explained. |
| format |
Article |
| author |
Gaidar, G.P. |
| spellingShingle |
Gaidar, G.P. Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Gaidar, G.P. |
| author_sort |
Gaidar, G.P. |
| title |
Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings |
| title_short |
Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings |
| title_full |
Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings |
| title_fullStr |
Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings |
| title_full_unstemmed |
Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings |
| title_sort |
changes in electrophysical properties of heavily doped n-ge <as> single crystals under the influence of thermoannealings |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2015 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120727 |
| citation_txt |
Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 53-56. — Бібліогр.: 13 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:37:44Z |
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