Features of piezoresistance in heavily doped n-silicon crystals von Gaidar, G.P.

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Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge von Gaidar, G.P.

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Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb> von Gaidar, G.P.

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On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors von Gaidar, G.P.

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Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings von Gaidar, G.P.

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Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals von Gaidar, G.P.

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Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity von Baranskii, P.I., Gaidar, G.P.

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Features of tensoresistance in single crystals of germanium and silicon with different dopants von Baranskii, P.I., Gaidar, G.P.

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The kinetic of point defect transformation during the annealing process in electron-irradiated silicon von Gaidar, G.P., Dolgolenko, A.P., Litovchenko, P.G.

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Radiation-induced effects in silicon von Gaidar, G.P., Pinkovska, M.B., Starchyk, M.I.

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Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons von Dolgolenko, A.P., Varentsov, M.D., Gaidar, G.P., Litovchenko, P.G.

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Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons von Dolgolenko, A.P., Litovchenko, P.G., Litovchenko, A.P., Varentsov, M.D., Lastovetsky, V.F., Gaidar, G.P.

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