Харвестер відкритої науки НАН України

Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings

за авторством Gaidar, G.P.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb>

за авторством Gaidar, G.P.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge

за авторством Gaidar, G.P.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type

за авторством Gaidar, G.P.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2012)

Features of piezoresistance in heavily doped n-silicon crystals

за авторством Gaidar, G.P.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors

за авторством Gaidar, G.P.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity

за авторством Baranskii, P.I., Gaidar, G.P.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2012)

Features of tensoresistance in single crystals of germanium and silicon with different dopants

за авторством Baranskii, P.I., Gaidar, G.P.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

The kinetic of point defect transformation during the annealing process in electron-irradiated silicon

за авторством Gaidar, G.P., Dolgolenko, A.P., Litovchenko, P.G.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

Radiation-induced effects in silicon

за авторством Gaidar, G.P., Pinkovska, M.B., Starchyk, M.I.
Опубліковано в: Вопросы атомной науки и техники (2019)

Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons

за авторством Dolgolenko, A.P., Varentsov, M.D., Gaidar, G.P., Litovchenko, P.G.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

The radiation hardness of pulled silicon doped with germanium

за авторством Dolgolenko, A.P., Gaidar, G.P., Varentsov, M.D., Litovchenko, P.G.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

Optimization of technology for fabrication of sectional nuclear radiation detectors based on high-resistance silicon

за авторством Gaidar, G.P., Berdnichenko, S.V., Vorobyov, V.G., Kochkin, V.I., Lastovetskiy, V.F., Litovchenko, P.G.
Опубліковано в: Вопросы атомной науки и техники (2017)

Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons

за авторством Dolgolenko, A.P., Litovchenko, P.G., Litovchenko, A.P., Varentsov, M.D., Lastovetsky, V.F., Gaidar, G.P.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

Influence of the surface electronic processes on the spectrometric characteristics of silicon detectors

за авторством Gaidar, G.P., Berdnichenko, S.V., Vorobyov, V.G., Kochkin, V.I., Lastovetskiy, V.F., Litovchenko, P.G.
Опубліковано в: Вопросы атомной науки и техники (2016)