Influence of low-temperature annealing on the state of CdTe surface

Influence of low-temperature annealing on the state of CdTe surface

Influence of low-temperature annealing on electrical and luminescent properties of semi-insulating n-CdTe:Sn is studied. It is shown that annealing at T ≥ 453 K modifies a near-surface layer of the crystals and this enhances the hole component of the conductivity. It is explained by Cd evaporation a...

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Бібліографічні деталі
Дата:2005
Автори: Parfenyuk, O.A., Ilashchuk, M.I., Chupyra, S.M., Burachek, V.R., Korbutyak, D.V., Krylyuk, S.G., Vakhnyak, N.D.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/120961
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Influence of low-temperature annealing on the state of CdTe surface / O.A. Parfenyuk, M.I. Ilashchuk, S.M. Chupyra, V.R. Burachek, D.V. Korbutyak, S.G. Krylyuk, N.D. Vakhnyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 50-53. — Бібліогр.: 17 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-120961
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spelling irk-123456789-1209612017-06-14T03:03:48Z Influence of low-temperature annealing on the state of CdTe surface Parfenyuk, O.A. Ilashchuk, M.I. Chupyra, S.M. Burachek, V.R. Korbutyak, D.V. Krylyuk, S.G. Vakhnyak, N.D. Influence of low-temperature annealing on electrical and luminescent properties of semi-insulating n-CdTe:Sn is studied. It is shown that annealing at T ≥ 453 K modifies a near-surface layer of the crystals and this enhances the hole component of the conductivity. It is explained by Cd evaporation and subsequent enrichment of the near-surface layer with cadmium vacancies. Results of electrical measurements are confirmed by our low-temperature photoluminescence experiments. 2005 Article Influence of low-temperature annealing on the state of CdTe surface / O.A. Parfenyuk, M.I. Ilashchuk, S.M. Chupyra, V.R. Burachek, D.V. Korbutyak, S.G. Krylyuk, N.D. Vakhnyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 50-53. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS: 72.80.Ey, 78.55.Et, 81.40.Rs, 81.40T http://dspace.nbuv.gov.ua/handle/123456789/120961 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Influence of low-temperature annealing on electrical and luminescent properties of semi-insulating n-CdTe:Sn is studied. It is shown that annealing at T ≥ 453 K modifies a near-surface layer of the crystals and this enhances the hole component of the conductivity. It is explained by Cd evaporation and subsequent enrichment of the near-surface layer with cadmium vacancies. Results of electrical measurements are confirmed by our low-temperature photoluminescence experiments.
format Article
author Parfenyuk, O.A.
Ilashchuk, M.I.
Chupyra, S.M.
Burachek, V.R.
Korbutyak, D.V.
Krylyuk, S.G.
Vakhnyak, N.D.
spellingShingle Parfenyuk, O.A.
Ilashchuk, M.I.
Chupyra, S.M.
Burachek, V.R.
Korbutyak, D.V.
Krylyuk, S.G.
Vakhnyak, N.D.
Influence of low-temperature annealing on the state of CdTe surface
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Parfenyuk, O.A.
Ilashchuk, M.I.
Chupyra, S.M.
Burachek, V.R.
Korbutyak, D.V.
Krylyuk, S.G.
Vakhnyak, N.D.
author_sort Parfenyuk, O.A.
title Influence of low-temperature annealing on the state of CdTe surface
title_short Influence of low-temperature annealing on the state of CdTe surface
title_full Influence of low-temperature annealing on the state of CdTe surface
title_fullStr Influence of low-temperature annealing on the state of CdTe surface
title_full_unstemmed Influence of low-temperature annealing on the state of CdTe surface
title_sort influence of low-temperature annealing on the state of cdte surface
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2005
url http://dspace.nbuv.gov.ua/handle/123456789/120961
citation_txt Influence of low-temperature annealing on the state of CdTe surface / O.A. Parfenyuk, M.I. Ilashchuk, S.M. Chupyra, V.R. Burachek, D.V. Korbutyak, S.G. Krylyuk, N.D. Vakhnyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 50-53. — Бібліогр.: 17 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:38:30Z
last_indexed 2023-10-18T20:38:30Z
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