Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon
Low-frequency internal friction and dynamic shear modulus (Geff) in Si monocrystal were investigated in the range of 20 to 200 ºC. Temperature hysteresis of internal friction was found and effective shear modulus was studied in the unirradiated and a series of irradiated silicon samples. The appeara...
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| Дата: | 2005 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120967 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon / B.I. Gutsulyak, A.V. Oliynych-Lysyuk, I.M. Fodchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 25-29. — Бібліогр.: 19 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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dspace |
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irk-123456789-1209672017-06-14T03:04:45Z Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon Gutsulyak, B.I. Oliynych-Lysyuk, A.V. Fodchuk, I.M. Low-frequency internal friction and dynamic shear modulus (Geff) in Si monocrystal were investigated in the range of 20 to 200 ºC. Temperature hysteresis of internal friction was found and effective shear modulus was studied in the unirradiated and a series of irradiated silicon samples. The appearance of a hysteresis loop is due to interaction of genetic microdefects with crystal point defects and their nonsymmetric distribution in the process of samples heating-cooling. 2005 Article Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon / B.I. Gutsulyak, A.V. Oliynych-Lysyuk, I.M. Fodchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 25-29. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS: 62.20.Dc, 81.40.Jj http://dspace.nbuv.gov.ua/handle/123456789/120967 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Low-frequency internal friction and dynamic shear modulus (Geff) in Si monocrystal were investigated in the range of 20 to 200 ºC. Temperature hysteresis of internal friction was found and effective shear modulus was studied in the unirradiated and a series of irradiated silicon samples. The appearance of a hysteresis loop is due to interaction of genetic microdefects with crystal point defects and their nonsymmetric distribution in the process of samples heating-cooling. |
| format |
Article |
| author |
Gutsulyak, B.I. Oliynych-Lysyuk, A.V. Fodchuk, I.M. |
| spellingShingle |
Gutsulyak, B.I. Oliynych-Lysyuk, A.V. Fodchuk, I.M. Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Gutsulyak, B.I. Oliynych-Lysyuk, A.V. Fodchuk, I.M. |
| author_sort |
Gutsulyak, B.I. |
| title |
Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon |
| title_short |
Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon |
| title_full |
Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon |
| title_fullStr |
Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon |
| title_full_unstemmed |
Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon |
| title_sort |
character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2005 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120967 |
| citation_txt |
Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon / B.I. Gutsulyak, A.V. Oliynych-Lysyuk, I.M. Fodchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 25-29. — Бібліогр.: 19 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:38:31Z |
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