Light absorption by inhomogeneous semiconductor film
Processes of light absorption by thin semiconductor film in the framework of local-field method are studied. The film is inhomogeneously implanted with O⁺ ions. A distribution of implanted layer is characterized by different profiles. The effective susceptibility (response to the external field) and...
Збережено в:
| Дата: | 2005 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120971 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Light absorption by inhomogeneous semiconductor film / L. Baraban, V. Lozovski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 66-73. — Бібліогр.: 24 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Processes of light absorption by thin semiconductor film in the framework of local-field method are studied. The film is inhomogeneously implanted with O⁺ ions. A distribution of implanted layer is characterized by different profiles. The effective susceptibility (response to the external field) and dissipative function of inhomogeneous in thickness semiconductor film were calculated. The absorption spectra are numerically calculated as a function of the frequency and angle of incidence. It was obtain that light absorption spectra are strongly dependent on profile distributions of implanted impurities along the film thickness. |
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