Borophosphosilicate glass component analysis using secondary neutral mass spectrometry
In the present study the SNMS technique for the quantitative component analysis of the borophosphosilicate glass layers was used. These layers were deposited on the silicon substrate by chemical vapor deposition method. The charge-up of the surface is compensated by plasma gas electrons in the high...
Збережено в:
| Дата: | 2002 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121124 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Borophosphosilicate glass component analysis using secondary neutral mass spectrometry / O. Oberemok, P. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 101-105. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121124 |
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irk-123456789-1211242017-06-14T03:06:27Z Borophosphosilicate glass component analysis using secondary neutral mass spectrometry Oberemok, O. Lytvyn, P. In the present study the SNMS technique for the quantitative component analysis of the borophosphosilicate glass layers was used. These layers were deposited on the silicon substrate by chemical vapor deposition method. The charge-up of the surface is compensated by plasma gas electrons in the high frequency mode sputtering. It is shown that modes of such sputtering significantly influence on the macro- and microrelief of the crater during the process of the depth component distribution analysis. An on-off time ratio change of the voltage applied to the sample results in changing the crater shape. At the same time the increase of the sputtering frequency results in appearance of thin protrusions at the crater bottom. Improvement of the depth resolution requires optimization both on-off time ratio and frequency of voltage applied to the sample. 2002 Article Borophosphosilicate glass component analysis using secondary neutral mass spectrometry / O. Oberemok, P. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 101-105. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 68.49.S, 82.80.M, 61.72.T, V, W, 73.20.H, 68.37.P, 61.43.F http://dspace.nbuv.gov.ua/handle/123456789/121124 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
In the present study the SNMS technique for the quantitative component analysis of the borophosphosilicate glass layers was used. These layers were deposited on the silicon substrate by chemical vapor deposition method. The charge-up of the surface is compensated by plasma gas electrons in the high frequency mode sputtering. It is shown that modes of such sputtering significantly influence on the macro- and microrelief of the crater during the process of the depth component distribution analysis. An on-off time ratio change of the voltage applied to the sample results in changing the crater shape. At the same time the increase of the sputtering frequency results in appearance of thin protrusions at the crater bottom. Improvement of the depth resolution requires optimization both on-off time ratio and frequency of voltage applied to the sample. |
| format |
Article |
| author |
Oberemok, O. Lytvyn, P. |
| spellingShingle |
Oberemok, O. Lytvyn, P. Borophosphosilicate glass component analysis using secondary neutral mass spectrometry Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Oberemok, O. Lytvyn, P. |
| author_sort |
Oberemok, O. |
| title |
Borophosphosilicate glass component analysis using secondary neutral mass spectrometry |
| title_short |
Borophosphosilicate glass component analysis using secondary neutral mass spectrometry |
| title_full |
Borophosphosilicate glass component analysis using secondary neutral mass spectrometry |
| title_fullStr |
Borophosphosilicate glass component analysis using secondary neutral mass spectrometry |
| title_full_unstemmed |
Borophosphosilicate glass component analysis using secondary neutral mass spectrometry |
| title_sort |
borophosphosilicate glass component analysis using secondary neutral mass spectrometry |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2002 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121124 |
| citation_txt |
Borophosphosilicate glass component analysis using secondary neutral mass spectrometry / O. Oberemok, P. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 101-105. — Бібліогр.: 11 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT oberemoko borophosphosilicateglasscomponentanalysisusingsecondaryneutralmassspectrometry AT lytvynp borophosphosilicateglasscomponentanalysisusingsecondaryneutralmassspectrometry |
| first_indexed |
2023-10-18T20:38:43Z |
| last_indexed |
2023-10-18T20:38:43Z |
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1796150742423175168 |