Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon

• Дата: 2000
• Автори: Gorban, A.P., Sachenko, A.V., Kostylyov, V.P., Prima, N.A.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/121135
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon / A.P. Gorban, A.V. Sachenko, V.P. Kostylyov, N.A. Prima // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 322-329. — Бібліогр.: 17 назв. — англ.

We have performed theoretical simulation of the photoconversion efficiency in silicon solar cells for AM0 conditions with regard to excitonic effects. Along with known effects, we have taken into account both radiative and nonradiative exciton annihilation. They manifest themselves as square-law rec...