Photoinduced structural changes in As₁₀₀₋xSx layers
The present paper is concerned with investigations of photoinduced structural changes in As100-xSx layers. Optical constants of variously treated (virgin, exposed, annealed) samples were determined from optical transmission measurements in the spectral region 400-2500 nm. The energy dependence of re...
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| Дата: | 2000 |
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| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121137 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photoinduced structural changes in As₁₀₀₋xSx layers / A. Stronski, M. Vlcek, A. Sklenar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 394-399. — Бібліогр.: 29 назв. — англ. |
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irk-123456789-1211372017-06-14T03:04:45Z Photoinduced structural changes in As₁₀₀₋xSx layers Stronski, A. Vlcek, M. Sklenar, A. The present paper is concerned with investigations of photoinduced structural changes in As100-xSx layers. Optical constants of variously treated (virgin, exposed, annealed) samples were determined from optical transmission measurements in the spectral region 400-2500 nm. The energy dependence of refractive index n for variously treated samples was fitted by the Wemple-DiDomenico dispersion relationship and used to estimate the single-oscillator model parameters. It was found, that exposure, as well as annealing leads to the increase in n values over the all investigated spectral region. Compositional dependencies of single-oscillator model parameter Ed (dispersion energy), optical dielectric constant ε(0) show maximum at stoichiometric composition As₄₀S₆₀ and, possibly, weak maximum at As₂₈.₆S₇₁.₄ composition. Changes of the parameters of the single-oscillator model induced by treatment are discussed on the base of photo- and thermally-induced structural changes, which were directly confirmed by Raman scattering measurements. Such photoinduced structural changes provide good etching selectivity of As-S layers in amine based solvents. Intensity dependence of the Raman bands corresponding to the As rich and S rich molecular fragments on exposure time is well described by the exponential decay, which correlates with exponential decay dependence of the etching rate of As₁₀₀₋xSx layers on exposure. 2000 Article Photoinduced structural changes in As₁₀₀₋xSx layers / A. Stronski, M. Vlcek, A. Sklenar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 394-399. — Бібліогр.: 29 назв. — англ. 1560-8034 PACS: 78.30L, 78.66.J, 81.05.Gc http://dspace.nbuv.gov.ua/handle/123456789/121137 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The present paper is concerned with investigations of photoinduced structural changes in As100-xSx layers. Optical constants of variously treated (virgin, exposed, annealed) samples were determined from optical transmission measurements in the spectral region 400-2500 nm. The energy dependence of refractive index n for variously treated samples was fitted by the Wemple-DiDomenico dispersion relationship and used to estimate the single-oscillator model parameters. It was found, that exposure, as well as annealing leads to the increase in n values over the all investigated spectral region. Compositional dependencies of single-oscillator model parameter Ed (dispersion energy), optical dielectric constant ε(0) show maximum at stoichiometric composition As₄₀S₆₀ and, possibly, weak maximum at As₂₈.₆S₇₁.₄ composition. Changes of the parameters of the single-oscillator model induced by treatment are discussed on the base of photo- and thermally-induced structural changes, which were directly confirmed by Raman scattering measurements. Such photoinduced structural changes provide good etching selectivity of As-S layers in amine based solvents. Intensity dependence of the Raman bands corresponding to the As rich and S rich molecular fragments on exposure time is well described by the exponential decay, which correlates with exponential decay dependence of the etching rate of As₁₀₀₋xSx layers on exposure. |
| format |
Article |
| author |
Stronski, A. Vlcek, M. Sklenar, A. |
| spellingShingle |
Stronski, A. Vlcek, M. Sklenar, A. Photoinduced structural changes in As₁₀₀₋xSx layers Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Stronski, A. Vlcek, M. Sklenar, A. |
| author_sort |
Stronski, A. |
| title |
Photoinduced structural changes in As₁₀₀₋xSx layers |
| title_short |
Photoinduced structural changes in As₁₀₀₋xSx layers |
| title_full |
Photoinduced structural changes in As₁₀₀₋xSx layers |
| title_fullStr |
Photoinduced structural changes in As₁₀₀₋xSx layers |
| title_full_unstemmed |
Photoinduced structural changes in As₁₀₀₋xSx layers |
| title_sort |
photoinduced structural changes in as₁₀₀₋xsx layers |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2000 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121137 |
| citation_txt |
Photoinduced structural changes in As₁₀₀₋xSx layers / A. Stronski, M. Vlcek, A. Sklenar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 394-399. — Бібліогр.: 29 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT stronskia photoinducedstructuralchangesinas100xsxlayers AT vlcekm photoinducedstructuralchangesinas100xsxlayers AT sklenara photoinducedstructuralchangesinas100xsxlayers |
| first_indexed |
2023-10-18T20:38:45Z |
| last_indexed |
2023-10-18T20:38:45Z |
| _version_ |
1796150743376330752 |