About the nature of diffusion anisotropy in CdS crystals
Electrodiffusion of copper into nominally undoped high-resistivity CdS crystals at 250-400°C has been investigated. A strong diffusion anisotropy has been observed, copper diffusion in perpendicular to the c-axis direction being more than one order faster as compared with its diffusion in parallel t...
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| Дата: | 2000 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121175 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | About the nature of diffusion anisotropy in CdS crystals / L.V. Borkovskaya, B.R.Dzhumaev, L.Yu. Khomenkova, N.E. Korsunskaya, I.V. Markevich, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 282-286. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121175 |
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dspace |
| spelling |
irk-123456789-1211752017-06-14T03:04:49Z About the nature of diffusion anisotropy in CdS crystals Borkovskaya, L.V. Dzhumaev, B.R. Khomenkova, L.Yu. Korsunskaya, N.E. Markevich, I.V. Sheinkman, M.K. Electrodiffusion of copper into nominally undoped high-resistivity CdS crystals at 250-400°C has been investigated. A strong diffusion anisotropy has been observed, copper diffusion in perpendicular to the c-axis direction being more than one order faster as compared with its diffusion in parallel to the c-axis direction. The effect has been shown to be not due to greater density of perpendicular to the c-axis dislocations than that of parallel to the c-axis ones, as it was thought earlier. Electrically active dislocations lying in the basal plane are supposed to be channels of fast diffusion owing to their intensive decoration with intrinsic defects and residual impurities. 2000 Article About the nature of diffusion anisotropy in CdS crystals / L.V. Borkovskaya, B.R.Dzhumaev, L.Yu. Khomenkova, N.E. Korsunskaya, I.V. Markevich, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 282-286. — англ. 1560-8034 PACS 66.30.Jt, 66.30.Qa, 61.72.Vv, 61.72.Ff, 61.72.Yx http://dspace.nbuv.gov.ua/handle/123456789/121175 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Electrodiffusion of copper into nominally undoped high-resistivity CdS crystals at 250-400°C has been investigated. A strong diffusion anisotropy has been observed, copper diffusion in perpendicular to the c-axis direction being more than one order faster as compared with its diffusion in parallel to the c-axis direction. The effect has been shown to be not due to greater density of perpendicular to the c-axis dislocations than that of parallel to the c-axis ones, as it was thought earlier. Electrically active dislocations lying in the basal plane are supposed to be channels of fast diffusion owing to their intensive decoration with intrinsic defects and residual impurities. |
| format |
Article |
| author |
Borkovskaya, L.V. Dzhumaev, B.R. Khomenkova, L.Yu. Korsunskaya, N.E. Markevich, I.V. Sheinkman, M.K. |
| spellingShingle |
Borkovskaya, L.V. Dzhumaev, B.R. Khomenkova, L.Yu. Korsunskaya, N.E. Markevich, I.V. Sheinkman, M.K. About the nature of diffusion anisotropy in CdS crystals Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Borkovskaya, L.V. Dzhumaev, B.R. Khomenkova, L.Yu. Korsunskaya, N.E. Markevich, I.V. Sheinkman, M.K. |
| author_sort |
Borkovskaya, L.V. |
| title |
About the nature of diffusion anisotropy in CdS crystals |
| title_short |
About the nature of diffusion anisotropy in CdS crystals |
| title_full |
About the nature of diffusion anisotropy in CdS crystals |
| title_fullStr |
About the nature of diffusion anisotropy in CdS crystals |
| title_full_unstemmed |
About the nature of diffusion anisotropy in CdS crystals |
| title_sort |
about the nature of diffusion anisotropy in cds crystals |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2000 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121175 |
| citation_txt |
About the nature of diffusion anisotropy in CdS crystals / L.V. Borkovskaya, B.R.Dzhumaev, L.Yu. Khomenkova, N.E. Korsunskaya, I.V. Markevich, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 282-286. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT borkovskayalv aboutthenatureofdiffusionanisotropyincdscrystals AT dzhumaevbr aboutthenatureofdiffusionanisotropyincdscrystals AT khomenkovalyu aboutthenatureofdiffusionanisotropyincdscrystals AT korsunskayane aboutthenatureofdiffusionanisotropyincdscrystals AT markevichiv aboutthenatureofdiffusionanisotropyincdscrystals AT sheinkmanmk aboutthenatureofdiffusionanisotropyincdscrystals |
| first_indexed |
2023-10-18T20:38:49Z |
| last_indexed |
2023-10-18T20:38:49Z |
| _version_ |
1796150741575925760 |