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Hot wall growth and properties of lead telluride films doped by germanium and gallium

Hot wall growth and properties of lead telluride films doped by germanium and gallium

The researches results of films (PbTe)₁₋y(GaTe)y and (Pb₁₋xGexTe)₁₋y(GaTe)y of n-type conductivity with carrier concentration within (2⋅10¹⁷÷9⋅10¹⁸) cm⁻³ are represented. The films were growth by modified hot wall technology on barium fluoride substrate. A state of films surface was investigated by...

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Main Authors: Lashkarev, G.V., Radchenko, M.V., Slynko, E.I., Vodopiyanov, V.N., Asotsky, V.V., Kaminsky, V.M., Beketov, G.V., Rengevich, E.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/121178
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spelling irk-123456789-1211782017-06-14T03:05:15Z Hot wall growth and properties of lead telluride films doped by germanium and gallium Lashkarev, G.V. Radchenko, M.V. Slynko, E.I. Vodopiyanov, V.N. Asotsky, V.V. Kaminsky, V.M. Beketov, G.V. Rengevich, E.V. The researches results of films (PbTe)₁₋y(GaTe)y and (Pb₁₋xGexTe)₁₋y(GaTe)y of n-type conductivity with carrier concentration within (2⋅10¹⁷÷9⋅10¹⁸) cm⁻³ are represented. The films were growth by modified hot wall technology on barium fluoride substrate. A state of films surface was investigated by Atomic Force Microscope using both contact and taping modes. Hall coefficient, specific resistivity and thermoelectromotive force of films were measured in the temperature range 77-300 K. The investigation showed that the presence of germanium leads to an appearance of significant features on temperature dependencies of termoelectro-motive force which are connected with phase transition of displacement type. Doping gallium leads to n-type conductivity of films which increases with impurity concentration. The ionization energies of Ga impurities levels (n - exp(-E/2kT)) were within 3÷10 meV. The change of energy position and width of impurity level with increase of impurity concentration is established. The unusual protrusions on terraces of growth were discovered. The tops of protrusions can be considered as quantum dots. Inasmuch as composition of protrusions is expected to be distinguished from that of the terraces, they can create pieces of quantum wires. 2000 Article Hot wall growth and properties of lead telluride films doped by germanium and gallium / G.V. Lashkarev, M.V. Radchenko, E.I. Slynko, V.N. Vodopiyanov, V.V. Asotsky, V.M. Kaminsky, G.V. Beketov, E.V. Rengevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 295-299. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 71.28, 71.55, 72.20.P, 72.20.M, 73.61.W http://dspace.nbuv.gov.ua/handle/123456789/121178 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The researches results of films (PbTe)₁₋y(GaTe)y and (Pb₁₋xGexTe)₁₋y(GaTe)y of n-type conductivity with carrier concentration within (2⋅10¹⁷÷9⋅10¹⁸) cm⁻³ are represented. The films were growth by modified hot wall technology on barium fluoride substrate. A state of films surface was investigated by Atomic Force Microscope using both contact and taping modes. Hall coefficient, specific resistivity and thermoelectromotive force of films were measured in the temperature range 77-300 K. The investigation showed that the presence of germanium leads to an appearance of significant features on temperature dependencies of termoelectro-motive force which are connected with phase transition of displacement type. Doping gallium leads to n-type conductivity of films which increases with impurity concentration. The ionization energies of Ga impurities levels (n - exp(-E/2kT)) were within 3÷10 meV. The change of energy position and width of impurity level with increase of impurity concentration is established. The unusual protrusions on terraces of growth were discovered. The tops of protrusions can be considered as quantum dots. Inasmuch as composition of protrusions is expected to be distinguished from that of the terraces, they can create pieces of quantum wires.
format Article
author Lashkarev, G.V.
Radchenko, M.V.
Slynko, E.I.
Vodopiyanov, V.N.
Asotsky, V.V.
Kaminsky, V.M.
Beketov, G.V.
Rengevich, E.V.
spellingShingle Lashkarev, G.V.
Radchenko, M.V.
Slynko, E.I.
Vodopiyanov, V.N.
Asotsky, V.V.
Kaminsky, V.M.
Beketov, G.V.
Rengevich, E.V.
Hot wall growth and properties of lead telluride films doped by germanium and gallium
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Lashkarev, G.V.
Radchenko, M.V.
Slynko, E.I.
Vodopiyanov, V.N.
Asotsky, V.V.
Kaminsky, V.M.
Beketov, G.V.
Rengevich, E.V.
author_sort Lashkarev, G.V.
title Hot wall growth and properties of lead telluride films doped by germanium and gallium
title_short Hot wall growth and properties of lead telluride films doped by germanium and gallium
title_full Hot wall growth and properties of lead telluride films doped by germanium and gallium
title_fullStr Hot wall growth and properties of lead telluride films doped by germanium and gallium
title_full_unstemmed Hot wall growth and properties of lead telluride films doped by germanium and gallium
title_sort hot wall growth and properties of lead telluride films doped by germanium and gallium
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2000
url http://dspace.nbuv.gov.ua/handle/123456789/121178
citation_txt Hot wall growth and properties of lead telluride films doped by germanium and gallium / G.V. Lashkarev, M.V. Radchenko, E.I. Slynko, V.N. Vodopiyanov, V.V. Asotsky, V.M. Kaminsky, G.V. Beketov, E.V. Rengevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 295-299. — Бібліогр.: 13 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:38:49Z
last_indexed 2023-10-18T20:38:49Z
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