2025-02-23T09:17:28-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121178%22&qt=morelikethis&rows=5
2025-02-23T09:17:28-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121178%22&qt=morelikethis&rows=5
2025-02-23T09:17:28-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T09:17:28-05:00 DEBUG: Deserialized SOLR response
Hot wall growth and properties of lead telluride films doped by germanium and gallium

Hot wall growth and properties of lead telluride films doped by germanium and gallium

The researches results of films (PbTe)₁₋y(GaTe)y and (Pb₁₋xGexTe)₁₋y(GaTe)y of n-type conductivity with carrier concentration within (2⋅10¹⁷÷9⋅10¹⁸) cm⁻³ are represented. The films were growth by modified hot wall technology on barium fluoride substrate. A state of films surface was investigated by...

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Bibliographic Details
Main Authors: Lashkarev, G.V., Radchenko, M.V., Slynko, E.I., Vodopiyanov, V.N., Asotsky, V.V., Kaminsky, V.M., Beketov, G.V., Rengevich, E.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/121178
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http://dspace.nbuv.gov.ua/handle/123456789/121178

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