Influence of ion implantation and annealing on composition and structure of GaAs surface
In this work investigated is the influence of barium ion implantation and subsequent annealing on composition, electronic and crystalline structure of GaAs surface. For the first time, the influence of low energy Ba⁺ ions implantation on the structure of GaAs surface was investigated using photoelec...
Збережено в:
| Дата: | 2002 |
|---|---|
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121184 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of ion implantation and annealing on composition and structure of GaAs surface / M.T. Normuradov, B.E. Umirzakov, D.A. Tashmukhamedova, A.K. Tashatov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 138-141. — Бібліогр.: 9 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121184 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1211842017-06-14T03:07:02Z Influence of ion implantation and annealing on composition and structure of GaAs surface Normuradov, M.T. Umirzakov, B.E. Tashmukhamedova, D.A. Tashatov, A.K. In this work investigated is the influence of barium ion implantation and subsequent annealing on composition, electronic and crystalline structure of GaAs surface. For the first time, the influence of low energy Ba⁺ ions implantation on the structure of GaAs surface was investigated using photoelectron spectroscopy. Determined are parameters of energy bands and the crystalline lattice of the three-component system Ga₀.₆Ba₀.₄As. The width of the forbidden gap is Eg = 1 eV, the lattice constant is a = 5.73 Å. 2002 Article Influence of ion implantation and annealing on composition and structure of GaAs surface / M.T. Normuradov, B.E. Umirzakov, D.A. Tashmukhamedova, A.K. Tashatov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 138-141. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 61.72.V, 61.80.-x, 79.60.-i http://dspace.nbuv.gov.ua/handle/123456789/121184 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
In this work investigated is the influence of barium ion implantation and subsequent annealing on composition, electronic and crystalline structure of GaAs surface. For the first time, the influence of low energy Ba⁺ ions implantation on the structure of GaAs surface was investigated using photoelectron spectroscopy. Determined are parameters of energy bands and the crystalline lattice of the three-component system Ga₀.₆Ba₀.₄As. The width of the forbidden gap is Eg = 1 eV, the lattice constant is a = 5.73 Å. |
| format |
Article |
| author |
Normuradov, M.T. Umirzakov, B.E. Tashmukhamedova, D.A. Tashatov, A.K. |
| spellingShingle |
Normuradov, M.T. Umirzakov, B.E. Tashmukhamedova, D.A. Tashatov, A.K. Influence of ion implantation and annealing on composition and structure of GaAs surface Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Normuradov, M.T. Umirzakov, B.E. Tashmukhamedova, D.A. Tashatov, A.K. |
| author_sort |
Normuradov, M.T. |
| title |
Influence of ion implantation and annealing on composition and structure of GaAs surface |
| title_short |
Influence of ion implantation and annealing on composition and structure of GaAs surface |
| title_full |
Influence of ion implantation and annealing on composition and structure of GaAs surface |
| title_fullStr |
Influence of ion implantation and annealing on composition and structure of GaAs surface |
| title_full_unstemmed |
Influence of ion implantation and annealing on composition and structure of GaAs surface |
| title_sort |
influence of ion implantation and annealing on composition and structure of gaas surface |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2002 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121184 |
| citation_txt |
Influence of ion implantation and annealing on composition and structure of GaAs surface / M.T. Normuradov, B.E. Umirzakov, D.A. Tashmukhamedova, A.K. Tashatov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 138-141. — Бібліогр.: 9 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT normuradovmt influenceofionimplantationandannealingoncompositionandstructureofgaassurface AT umirzakovbe influenceofionimplantationandannealingoncompositionandstructureofgaassurface AT tashmukhamedovada influenceofionimplantationandannealingoncompositionandstructureofgaassurface AT tashatovak influenceofionimplantationandannealingoncompositionandstructureofgaassurface |
| first_indexed |
2023-10-18T20:38:50Z |
| last_indexed |
2023-10-18T20:38:50Z |
| _version_ |
1796150745821609984 |