2025-02-23T18:20:44-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121184%22&qt=morelikethis&rows=5
2025-02-23T18:20:44-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121184%22&qt=morelikethis&rows=5
2025-02-23T18:20:44-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T18:20:44-05:00 DEBUG: Deserialized SOLR response
Influence of ion implantation and annealing on composition and structure of GaAs surface

Influence of ion implantation and annealing on composition and structure of GaAs surface

In this work investigated is the influence of barium ion implantation and subsequent annealing on composition, electronic and crystalline structure of GaAs surface. For the first time, the influence of low energy Ba⁺ ions implantation on the structure of GaAs surface was investigated using photoelec...

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Bibliographic Details
Main Authors: Normuradov, M.T., Umirzakov, B.E., Tashmukhamedova, D.A., Tashatov, A.K.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/121184
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2025-02-23T18:20:44-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121184%22&qt=morelikethis
2025-02-23T18:20:44-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121184%22&qt=morelikethis
2025-02-23T18:20:44-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T18:20:44-05:00 DEBUG: Deserialized SOLR response

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