The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices
Two doping methods for introducing phosphorus atoms into polysilicon to form a gate electrode for 0.5 mm CMOS were investigated. These methods were ion implantation and the ”in-situ” one (it is also known as thermal diffusion). For the in-situ method, the concentration of 1.8.10²⁰cm-³ for Si₂H₆ and...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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| Дата: | 2002 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121185 |
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| Цитувати: | The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices / I. Ahmad, A. Omar, A. Mikdad // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 188-192. — Бібліогр.: 14 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1211852017-06-14T03:06:32Z The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices Ahmad, I. Omar, A. Mikdad, A. Two doping methods for introducing phosphorus atoms into polysilicon to form a gate electrode for 0.5 mm CMOS were investigated. These methods were ion implantation and the ”in-situ” one (it is also known as thermal diffusion). For the in-situ method, the concentration of 1.8.10²⁰cm-³ for Si₂H₆ and phosphane (PH3) were used, in the course of ion implantation applying two different doses: 2.0.10¹⁶ and 3.10¹⁶cm-² at 40 keV. The micromorphology of the polysilicon surface was studied using the atomic force microscopy (AFM). The polysilicon thickness obtained via the in-situ method ranged between 12.35 and 26.08 nm, with an average value thickness of 18.0 nm, and its sheet resistance value was 21±1 ohm/square. As for the ion implantation method, at the lower doses the thickness ranged at about 12.00 upto 46.0 nm with an average value of 24.0 nm, and its sheet resistance values were of 36±13 and 45±21 ohm/square, respectively. At the higher doses, the thickness varied from 12.16 to 47.84 nm with an average meaning 23.96 nm, and its sheet resistance value was between 25 to 40 ohm/square. Therefore, polysilicon doped by the in-situ method has smoother and thinner surface and possesses better electrical properties. 2002 Article The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices / I. Ahmad, A. Omar, A. Mikdad // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 188-192. — Бібліогр.: 14 назв. — англ. 1560-8034 http://dspace.nbuv.gov.ua/handle/123456789/121185 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Two doping methods for introducing phosphorus atoms into polysilicon to form a gate electrode for 0.5 mm CMOS were investigated. These methods were ion implantation and the ”in-situ” one (it is also known as thermal diffusion). For the in-situ method, the concentration of 1.8.10²⁰cm-³ for Si₂H₆ and phosphane (PH3) were used, in the course of ion implantation applying two different doses: 2.0.10¹⁶ and 3.10¹⁶cm-² at 40 keV. The micromorphology of the polysilicon surface was studied using the atomic force microscopy (AFM). The polysilicon thickness obtained via the in-situ method ranged between 12.35 and 26.08 nm, with an average value thickness of 18.0 nm, and its sheet resistance value was 21±1 ohm/square. As for the ion implantation method, at the lower doses the thickness ranged at about 12.00 upto 46.0 nm with an average value of 24.0 nm, and its sheet resistance values were of 36±13 and 45±21 ohm/square, respectively. At the higher doses, the thickness varied from 12.16 to 47.84 nm with an average meaning 23.96 nm, and its sheet resistance value was between 25 to 40 ohm/square. Therefore, polysilicon doped by the in-situ method has smoother and thinner surface and possesses better electrical properties. |
| format |
Article |
| author |
Ahmad, I. Omar, A. Mikdad, A. |
| spellingShingle |
Ahmad, I. Omar, A. Mikdad, A. The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Ahmad, I. Omar, A. Mikdad, A. |
| author_sort |
Ahmad, I. |
| title |
The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices |
| title_short |
The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices |
| title_full |
The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices |
| title_fullStr |
The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices |
| title_full_unstemmed |
The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices |
| title_sort |
effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron cmos devices |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2002 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121185 |
| citation_txt |
The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices / I. Ahmad, A. Omar, A. Mikdad // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 188-192. — Бібліогр.: 14 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT ahmadi theeffectofdopingmethodsonelectricalpropertiesandmicromorphologyofpolysilicongateelectrodeinsubmicroncmosdevices AT omara theeffectofdopingmethodsonelectricalpropertiesandmicromorphologyofpolysilicongateelectrodeinsubmicroncmosdevices AT mikdada theeffectofdopingmethodsonelectricalpropertiesandmicromorphologyofpolysilicongateelectrodeinsubmicroncmosdevices AT ahmadi effectofdopingmethodsonelectricalpropertiesandmicromorphologyofpolysilicongateelectrodeinsubmicroncmosdevices AT omara effectofdopingmethodsonelectricalpropertiesandmicromorphologyofpolysilicongateelectrodeinsubmicroncmosdevices AT mikdada effectofdopingmethodsonelectricalpropertiesandmicromorphologyofpolysilicongateelectrodeinsubmicroncmosdevices |
| first_indexed |
2023-10-18T20:38:50Z |
| last_indexed |
2023-10-18T20:38:50Z |
| _version_ |
1796150745927516160 |