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Photoelectric properties of ₂O₃-pGaSe-pInSe cascade heterostructures
Cascade heterostructure of nGa₂O₃-pGaSe-pInSe was created, and a corresponding band energy diagram was built. Electrical and photoelectric properties of this structure were investigated. Due to isotype pGaSe-pInSe heterojunction the photosensitivity spectrum of nGa₂O₃-pGaSe-pInSe heterostructure ext...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/121192 |
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irk-123456789-1211922017-06-14T03:07:22Z Photoelectric properties of ₂O₃-pGaSe-pInSe cascade heterostructures Savchyn, V.P. Stakhira, J.M. Fiyala, Ya.M. Furtak, V.B. Cascade heterostructure of nGa₂O₃-pGaSe-pInSe was created, and a corresponding band energy diagram was built. Electrical and photoelectric properties of this structure were investigated. Due to isotype pGaSe-pInSe heterojunction the photosensitivity spectrum of nGa₂O₃-pGaSe-pInSe heterostructure extends up to 1.2 eV in IR range as referred to the photosensitivity spectrum of anisotype nGa₂O₃-pGaSe heterojunction. 2002 Article Photoelectric properties of ₂O₃-pGaSe-pInSe cascade heterostructures / V.P. Savchyn, J.M. Stakhira, Ya.M. Fiyala, V.B. Furtak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 176-179. — Бібліогр.: 23 назв. — англ. 1560-8034 PACS: 72.40, 74.40 http://dspace.nbuv.gov.ua/handle/123456789/121192 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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English |
| description |
Cascade heterostructure of nGa₂O₃-pGaSe-pInSe was created, and a corresponding band energy diagram was built. Electrical and photoelectric properties of this structure were investigated. Due to isotype pGaSe-pInSe heterojunction the photosensitivity spectrum of nGa₂O₃-pGaSe-pInSe heterostructure extends up to 1.2 eV in IR range as referred to the photosensitivity spectrum of anisotype nGa₂O₃-pGaSe heterojunction. |
| format |
Article |
| author |
Savchyn, V.P. Stakhira, J.M. Fiyala, Ya.M. Furtak, V.B. |
| spellingShingle |
Savchyn, V.P. Stakhira, J.M. Fiyala, Ya.M. Furtak, V.B. Photoelectric properties of ₂O₃-pGaSe-pInSe cascade heterostructures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Savchyn, V.P. Stakhira, J.M. Fiyala, Ya.M. Furtak, V.B. |
| author_sort |
Savchyn, V.P. |
| title |
Photoelectric properties of ₂O₃-pGaSe-pInSe cascade heterostructures |
| title_short |
Photoelectric properties of ₂O₃-pGaSe-pInSe cascade heterostructures |
| title_full |
Photoelectric properties of ₂O₃-pGaSe-pInSe cascade heterostructures |
| title_fullStr |
Photoelectric properties of ₂O₃-pGaSe-pInSe cascade heterostructures |
| title_full_unstemmed |
Photoelectric properties of ₂O₃-pGaSe-pInSe cascade heterostructures |
| title_sort |
photoelectric properties of ₂o₃-pgase-pinse cascade heterostructures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2002 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121192 |
| citation_txt |
Photoelectric properties of ₂O₃-pGaSe-pInSe cascade heterostructures / V.P. Savchyn, J.M. Stakhira, Ya.M. Fiyala, V.B. Furtak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 176-179. — Бібліогр.: 23 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT savchynvp photoelectricpropertiesof2o3pgasepinsecascadeheterostructures AT stakhirajm photoelectricpropertiesof2o3pgasepinsecascadeheterostructures AT fiyalayam photoelectricpropertiesof2o3pgasepinsecascadeheterostructures AT furtakvb photoelectricpropertiesof2o3pgasepinsecascadeheterostructures |
| first_indexed |
2023-10-18T20:38:51Z |
| last_indexed |
2023-10-18T20:38:51Z |
| _version_ |
1796150746669907968 |