Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power

• Дата: 2015
• Автори: Myroniuk, D.V., Ievtushenko, A.I., Lashkarev, G.V., Maslyuk, V.T., Timofeeva, I.I., Baturin, V.A., Karpenko, O.Yu., Kuznetsov, V.M., Dranchuk, M.V.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/121221
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power / D.V. Myroniuk, A.I. Ievtushenko, G.V. Lashkarev, V.T. Maslyuk, I.I. Timofeeva, V.A. Baturin, O.Yu. Karpenko, V.M. Kuznetsov, M.V. Dranchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 286-291. — Бібліогр.: 25 назв. — англ.

Transparent conductive oxide thin films of Al-doped ZnO grown by rf magnetron sputtering were irradiated with high energy electrons with the energy 12.6 MeV and fluence 5·10¹⁴ e/cm². The films were produced using different sputtering powers. It has been shown that electron irradiation creates defects that lead to distortions of the crystal lattice, which results in reduced crystallinity of the films. Also, it leads to film heating that results in radiation annealing and relaxation of the lattice.