Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power

Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power

Transparent conductive oxide thin films of Al-doped ZnO grown by rf magnetron sputtering were irradiated with high energy electrons with the energy 12.6 MeV and fluence 5·10¹⁴ e/cm². The films were produced using different sputtering powers. It has been shown that electron irradiation creates defect...

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Бібліографічні деталі
Дата:2015
Автори: Myroniuk, D.V., Ievtushenko, A.I., Lashkarev, G.V., Maslyuk, V.T., Timofeeva, I.I., Baturin, V.A., Karpenko, O.Yu., Kuznetsov, V.M., Dranchuk, M.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121221
Теги: Додати тег
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power / D.V. Myroniuk, A.I. Ievtushenko, G.V. Lashkarev, V.T. Maslyuk, I.I. Timofeeva, V.A. Baturin, O.Yu. Karpenko, V.M. Kuznetsov, M.V. Dranchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 286-291. — Бібліогр.: 25 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1212212017-06-14T03:07:35Z Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power Myroniuk, D.V. Ievtushenko, A.I. Lashkarev, G.V. Maslyuk, V.T. Timofeeva, I.I. Baturin, V.A. Karpenko, O.Yu. Kuznetsov, V.M. Dranchuk, M.V. Transparent conductive oxide thin films of Al-doped ZnO grown by rf magnetron sputtering were irradiated with high energy electrons with the energy 12.6 MeV and fluence 5·10¹⁴ e/cm². The films were produced using different sputtering powers. It has been shown that electron irradiation creates defects that lead to distortions of the crystal lattice, which results in reduced crystallinity of the films. Also, it leads to film heating that results in radiation annealing and relaxation of the lattice. 2015 Article Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power / D.V. Myroniuk, A.I. Ievtushenko, G.V. Lashkarev, V.T. Maslyuk, I.I. Timofeeva, V.A. Baturin, O.Yu. Karpenko, V.M. Kuznetsov, M.V. Dranchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 286-291. — Бібліогр.: 25 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.03.286 PACS 61.05.cp, 61.80.-x, 77.55.hf, 81.15.Cd http://dspace.nbuv.gov.ua/handle/123456789/121221 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Transparent conductive oxide thin films of Al-doped ZnO grown by rf magnetron sputtering were irradiated with high energy electrons with the energy 12.6 MeV and fluence 5·10¹⁴ e/cm². The films were produced using different sputtering powers. It has been shown that electron irradiation creates defects that lead to distortions of the crystal lattice, which results in reduced crystallinity of the films. Also, it leads to film heating that results in radiation annealing and relaxation of the lattice.
format Article
author Myroniuk, D.V.
Ievtushenko, A.I.
Lashkarev, G.V.
Maslyuk, V.T.
Timofeeva, I.I.
Baturin, V.A.
Karpenko, O.Yu.
Kuznetsov, V.M.
Dranchuk, M.V.
spellingShingle Myroniuk, D.V.
Ievtushenko, A.I.
Lashkarev, G.V.
Maslyuk, V.T.
Timofeeva, I.I.
Baturin, V.A.
Karpenko, O.Yu.
Kuznetsov, V.M.
Dranchuk, M.V.
Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Myroniuk, D.V.
Ievtushenko, A.I.
Lashkarev, G.V.
Maslyuk, V.T.
Timofeeva, I.I.
Baturin, V.A.
Karpenko, O.Yu.
Kuznetsov, V.M.
Dranchuk, M.V.
author_sort Myroniuk, D.V.
title Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power
title_short Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power
title_full Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power
title_fullStr Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power
title_full_unstemmed Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power
title_sort effect of electron irradiation on transparent conductive films zno:al deposited at different sputtering power
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2015
url http://dspace.nbuv.gov.ua/handle/123456789/121221
citation_txt Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power / D.V. Myroniuk, A.I. Ievtushenko, G.V. Lashkarev, V.T. Maslyuk, I.I. Timofeeva, V.A. Baturin, O.Yu. Karpenko, V.M. Kuznetsov, M.V. Dranchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 286-291. — Бібліогр.: 25 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:38:56Z
last_indexed 2023-10-18T20:38:56Z
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