2025-02-23T06:39:24-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121255%22&qt=morelikethis&rows=5
2025-02-23T06:39:24-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121255%22&qt=morelikethis&rows=5
2025-02-23T06:39:24-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T06:39:24-05:00 DEBUG: Deserialized SOLR response
Thermal annealing and evolution of defects in neutron-irradiated cubic SiC

Thermal annealing and evolution of defects in neutron-irradiated cubic SiC

A careful study of neutron-irradiated cubic SiC crystals (3С-SiC(n)) has been performed using electron paramagnetic resonance (EPR) in the course of their thermal annealing within the 200…1100 °C temperature range. Several inherent temperatures have been found for annealing and transformations of pr...

Full description

Saved in:
Bibliographic Details
Main Authors: Bratus, V.Ya., Melnyk, R.S., Shanina, B.D., Okulov, S.M.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/121255
Tags: Add Tag
No Tags, Be the first to tag this record!
id irk-123456789-121255
record_format dspace
spelling irk-123456789-1212552017-06-14T03:07:51Z Thermal annealing and evolution of defects in neutron-irradiated cubic SiC Bratus, V.Ya. Melnyk, R.S. Shanina, B.D. Okulov, S.M. A careful study of neutron-irradiated cubic SiC crystals (3С-SiC(n)) has been performed using electron paramagnetic resonance (EPR) in the course of their thermal annealing within the 200…1100 °C temperature range. Several inherent temperatures have been found for annealing and transformations of primary defects in 3С-SiC(n) among which there are isolated negatively charged silicon vacancy VSi⁻, neutral divacancy (VSi–VC)⁰, negatively charged carbon vacancyantisite pair (VC–CSi)⁻ and neutral carbon (100) split interstitial (CC)C⁰. It has been shown that transformation of VSi⁻ into (VC–CSi)⁻ complex is among the mechanisms of silicon vacancy annealing. As it has been established on the basis of the observed hyperfine structure, the secondary T6 center is characterized by the fourfold silicon coordination and assigned to the spin S = 3/2 carbon vacancy-related pair defect. The symmetry reduction of the (VC–VSi)⁰ center is attributed to local rearrangements in the neighborhood of divacancy, and its intensity variations are assigned to changes of the Fermi-level position. Two defects with similar symmetry and close values of zero-field splitting constants D, which concentrations increase by a factor of ten after annealing at 900 °С, are tentatively attributed to the (100) split interstitial (CC)C⁰ and (NС)С⁰ pairs 2015 Article Thermal annealing and evolution of defects in neutron-irradiated cubic SiC / V.Ya. Bratus’, R.S. Melnyk, B.D. Shanina, S.M. Okulov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 403-409. — Бібліогр.: 30 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.04.403 PACS 61.72.Bb, 61.72.Ji, 61.80.Fe, 61.82.Fk http://dspace.nbuv.gov.ua/handle/123456789/121255 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description A careful study of neutron-irradiated cubic SiC crystals (3С-SiC(n)) has been performed using electron paramagnetic resonance (EPR) in the course of their thermal annealing within the 200…1100 °C temperature range. Several inherent temperatures have been found for annealing and transformations of primary defects in 3С-SiC(n) among which there are isolated negatively charged silicon vacancy VSi⁻, neutral divacancy (VSi–VC)⁰, negatively charged carbon vacancyantisite pair (VC–CSi)⁻ and neutral carbon (100) split interstitial (CC)C⁰. It has been shown that transformation of VSi⁻ into (VC–CSi)⁻ complex is among the mechanisms of silicon vacancy annealing. As it has been established on the basis of the observed hyperfine structure, the secondary T6 center is characterized by the fourfold silicon coordination and assigned to the spin S = 3/2 carbon vacancy-related pair defect. The symmetry reduction of the (VC–VSi)⁰ center is attributed to local rearrangements in the neighborhood of divacancy, and its intensity variations are assigned to changes of the Fermi-level position. Two defects with similar symmetry and close values of zero-field splitting constants D, which concentrations increase by a factor of ten after annealing at 900 °С, are tentatively attributed to the (100) split interstitial (CC)C⁰ and (NС)С⁰ pairs
format Article
author Bratus, V.Ya.
Melnyk, R.S.
Shanina, B.D.
Okulov, S.M.
spellingShingle Bratus, V.Ya.
Melnyk, R.S.
Shanina, B.D.
Okulov, S.M.
Thermal annealing and evolution of defects in neutron-irradiated cubic SiC
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Bratus, V.Ya.
Melnyk, R.S.
Shanina, B.D.
Okulov, S.M.
author_sort Bratus, V.Ya.
title Thermal annealing and evolution of defects in neutron-irradiated cubic SiC
title_short Thermal annealing and evolution of defects in neutron-irradiated cubic SiC
title_full Thermal annealing and evolution of defects in neutron-irradiated cubic SiC
title_fullStr Thermal annealing and evolution of defects in neutron-irradiated cubic SiC
title_full_unstemmed Thermal annealing and evolution of defects in neutron-irradiated cubic SiC
title_sort thermal annealing and evolution of defects in neutron-irradiated cubic sic
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2015
url http://dspace.nbuv.gov.ua/handle/123456789/121255
citation_txt Thermal annealing and evolution of defects in neutron-irradiated cubic SiC / V.Ya. Bratus’, R.S. Melnyk, B.D. Shanina, S.M. Okulov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 403-409. — Бібліогр.: 30 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT bratusvya thermalannealingandevolutionofdefectsinneutronirradiatedcubicsic
AT melnykrs thermalannealingandevolutionofdefectsinneutronirradiatedcubicsic
AT shaninabd thermalannealingandevolutionofdefectsinneutronirradiatedcubicsic
AT okulovsm thermalannealingandevolutionofdefectsinneutronirradiatedcubicsic
first_indexed 2023-10-18T20:39:00Z
last_indexed 2023-10-18T20:39:00Z
_version_ 1796150753121796096

Similar Items