Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film
We propose a phenomenological model that explains the changes in the optical spectra of the structures wide gap semiconductor – oxide film, which takes place as a result of short-term microwave treatment. To explain the specific athermal microwave exposure, proposed was an integrated approach that i...
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| Дата: | 2015 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121274 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 452-455. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121274 |
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| spelling |
irk-123456789-1212742017-06-14T03:07:03Z Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film Okhrimenko, O.B We propose a phenomenological model that explains the changes in the optical spectra of the structures wide gap semiconductor – oxide film, which takes place as a result of short-term microwave treatment. To explain the specific athermal microwave exposure, proposed was an integrated approach that is a combination of several processes that are described by various models. Interaction of processes caused by the resonant interaction of microwave radiation with the intrinsic oscillations of dislocations, which can lead to dislocation motion, has been considered. The length of dislocations, for which the condition of the resonant interaction is fulfilled, has been estimated. It has been shown that the combination of the considered processes can lead to appearance of additional centers of light absorption or scattering, which is manifested in the spectra of optical absorption and photoluminescence of the structures wide-gap semiconductor – oxide film 2015 Article Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 452-455. — Бібліогр.: 13 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.04.452 PACS 61.72.Ff, 68.35.-p, 78.70.Gq http://dspace.nbuv.gov.ua/handle/123456789/121274 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
We propose a phenomenological model that explains the changes in the optical spectra of the structures wide gap semiconductor – oxide film, which takes place as a result of short-term microwave treatment. To explain the specific athermal microwave exposure, proposed was an integrated approach that is a combination of several processes that are described by various models. Interaction of processes caused by the resonant interaction of microwave radiation with the intrinsic oscillations of dislocations, which can lead to dislocation motion, has been considered. The length of dislocations, for which the condition of the resonant interaction is fulfilled, has been estimated. It has been shown that the combination of the considered processes can lead to appearance of additional centers of light absorption or scattering, which is manifested in the spectra of optical absorption and photoluminescence of the structures wide-gap semiconductor – oxide film |
| format |
Article |
| author |
Okhrimenko, O.B |
| spellingShingle |
Okhrimenko, O.B Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Okhrimenko, O.B |
| author_sort |
Okhrimenko, O.B |
| title |
Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film |
| title_short |
Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film |
| title_full |
Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film |
| title_fullStr |
Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film |
| title_full_unstemmed |
Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film |
| title_sort |
phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2015 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121274 |
| citation_txt |
Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 452-455. — Бібліогр.: 13 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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AT okhrimenkoob phenomenologicalmodelofathermalinteractionofmicrowaveradiationwiththestructureswidegapsemiconductoroxidefilm |
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2023-10-18T20:39:03Z |
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2023-10-18T20:39:03Z |
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