Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing von Okhrimenko, O.B.

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A model for non-thermal action of microwave radiation on oxide film/semiconductor structures von Okhrimenko, O.B.

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Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film von Okhrimenko, O.B

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Electroluminescence powdered ZnS:Cu obtained by one-stage synthesis von Bacherikov, Yu.Yu., Zhuk, A.G., Okhrimenko, O.B., Kardashov, D.L., Kozitskiy, S.V.

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Influence of the presence of a fluxing agent and its composition on the spectral characteristics of ZnS(Cu) obtained by self-propagating high-temperature synthesis von Bacherikov, Yu.Yu., Okhrimenko, O.B., Zhuk, A.G., Kurichka, R.V., Gilchuk, A.V.

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Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films von Bacherikov, Yu.Yu., Boltovets, N.S., Konakova, R.V., Kolyadina, E.Yu., Ledn’ova, T.M., Okhrimenko, O.B.

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The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis von Bacherikov, Yu.Yu., Zhuk, A.G., Optasyuk, S.V., Okhrimenko, O.B., Kardashov, K.D., Kozitskiy, S.V.

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Effect of heating rate on oxidation process of fine-dispersed ZnS:Mn obtained by SHS von Bacherikov, Yu.Yu., Zhuk, A.G., Okhrimenko, O.B., Kardashov, D.L., Kozitskiy, S.V., Kidalov, V.V.

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Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures von Bacherikov, Yu.Yu., Konakova, R.V., Kolyadina, E.Yu., Kocherov, A.N., Okhrimenko, O.B., Svetlichnyi, A.M.

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Effect of heating rate on oxidation process of fine-dispersed ZnS:Mn obtained by SHS von Bacherikov, Yu.Yu., Zhuk, A.G., Okhrimenko, O.B., Kardashov, D.L., Kozitskiy, S.V., Kidalov, V.V.

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Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment von Konakova, R.V., Kladko, V.P., Lytvyn, O.S., Okhrimenko, O.B., Konoplev, B.G., Svetlichnyi, A.M., Lissotschenko, V.N.

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