Influence of nanostructured ITO films on surface recombination processes in silicon solar cells
This paper describes the results of comparative studies of illumination currentvoltage characteristics and spectral characteristics of silicon solar cells with rear location of the collector p-n-junction for the cases of non-passivated and passivated front illuminated surface. Passivation was perfor...
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Дата: | 2015 |
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Автори: | , , , , , , |
Формат: | Стаття |
Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121277 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Influence of nanostructured ITO films on surface recombination processes in silicon solar cells / V.P. Kostylyov, A.V. Sachenko, O.A. Serba, T.V. Slusar, V.M. Vlasyuk, P.O. Tytarenko, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 464-467. — Бібліогр.: 9 назв. — англ. |
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irk-123456789-1212772017-06-14T03:07:50Z Influence of nanostructured ITO films on surface recombination processes in silicon solar cells Kostylyov, V.P. Sachenko, A.V. Serba, O.A. Slusar, T.V. Vlasyuk, V.M. Tytarenko, P.O. Chernenko, V.V. This paper describes the results of comparative studies of illumination currentvoltage characteristics and spectral characteristics of silicon solar cells with rear location of the collector p-n-junction for the cases of non-passivated and passivated front illuminated surface. Passivation was performed by silicon dioxide layer or ITO layer. It was found that ITO layer surface passivation with formation of ITO/silicon heterojunction, unlike silicon dioxide layer passivation, leads to a significant reduction of the effective surface recombination velocity. It significantly increases the value of the internal quantum efficiency in the wavelength range from 550 to 1050 nm and, as a result, significantly increases the value of short-circuit current of solar cells. 2015 Article Influence of nanostructured ITO films on surface recombination processes in silicon solar cells / V.P. Kostylyov, A.V. Sachenko, O.A. Serba, T.V. Slusar, V.M. Vlasyuk, P.O. Tytarenko, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 464-467. — Бібліогр.: 9 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.04.464 PACS 72.20.Jv, 73.50.Gr, 78.67.-n, 88.40.jj http://dspace.nbuv.gov.ua/handle/123456789/121277 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
description |
This paper describes the results of comparative studies of illumination currentvoltage characteristics and spectral characteristics of silicon solar cells with rear location of the collector p-n-junction for the cases of non-passivated and passivated front illuminated surface. Passivation was performed by silicon dioxide layer or ITO layer. It was found that ITO layer surface passivation with formation of ITO/silicon heterojunction, unlike silicon dioxide layer passivation, leads to a significant reduction of the effective surface recombination velocity. It significantly increases the value of the internal quantum efficiency in the wavelength range from 550 to 1050 nm and, as a result, significantly increases the value of short-circuit current of solar cells. |
format |
Article |
author |
Kostylyov, V.P. Sachenko, A.V. Serba, O.A. Slusar, T.V. Vlasyuk, V.M. Tytarenko, P.O. Chernenko, V.V. |
spellingShingle |
Kostylyov, V.P. Sachenko, A.V. Serba, O.A. Slusar, T.V. Vlasyuk, V.M. Tytarenko, P.O. Chernenko, V.V. Influence of nanostructured ITO films on surface recombination processes in silicon solar cells Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Kostylyov, V.P. Sachenko, A.V. Serba, O.A. Slusar, T.V. Vlasyuk, V.M. Tytarenko, P.O. Chernenko, V.V. |
author_sort |
Kostylyov, V.P. |
title |
Influence of nanostructured ITO films on surface recombination processes in silicon solar cells |
title_short |
Influence of nanostructured ITO films on surface recombination processes in silicon solar cells |
title_full |
Influence of nanostructured ITO films on surface recombination processes in silicon solar cells |
title_fullStr |
Influence of nanostructured ITO films on surface recombination processes in silicon solar cells |
title_full_unstemmed |
Influence of nanostructured ITO films on surface recombination processes in silicon solar cells |
title_sort |
influence of nanostructured ito films on surface recombination processes in silicon solar cells |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2015 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/121277 |
citation_txt |
Influence of nanostructured ITO films on surface recombination processes in silicon solar cells / V.P. Kostylyov, A.V. Sachenko, O.A. Serba, T.V. Slusar, V.M. Vlasyuk, P.O. Tytarenko, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 464-467. — Бібліогр.: 9 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
AT kostylyovvp influenceofnanostructureditofilmsonsurfacerecombinationprocessesinsiliconsolarcells AT sachenkoav influenceofnanostructureditofilmsonsurfacerecombinationprocessesinsiliconsolarcells AT serbaoa influenceofnanostructureditofilmsonsurfacerecombinationprocessesinsiliconsolarcells AT slusartv influenceofnanostructureditofilmsonsurfacerecombinationprocessesinsiliconsolarcells AT vlasyukvm influenceofnanostructureditofilmsonsurfacerecombinationprocessesinsiliconsolarcells AT tytarenkopo influenceofnanostructureditofilmsonsurfacerecombinationprocessesinsiliconsolarcells AT chernenkovv influenceofnanostructureditofilmsonsurfacerecombinationprocessesinsiliconsolarcells |
first_indexed |
2023-10-18T20:39:03Z |
last_indexed |
2023-10-18T20:39:03Z |
_version_ |
1796150755444391936 |