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Influence of nanostructured ITO films on surface recombination processes in silicon solar cells

Influence of nanostructured ITO films on surface recombination processes in silicon solar cells

This paper describes the results of comparative studies of illumination currentvoltage characteristics and spectral characteristics of silicon solar cells with rear location of the collector p-n-junction for the cases of non-passivated and passivated front illuminated surface. Passivation was perfor...

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Main Authors: Kostylyov, V.P., Sachenko, A.V., Serba, O.A., Slusar, T.V., Vlasyuk, V.M., Tytarenko, P.O., Chernenko, V.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/121277
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spelling irk-123456789-1212772017-06-14T03:07:50Z Influence of nanostructured ITO films on surface recombination processes in silicon solar cells Kostylyov, V.P. Sachenko, A.V. Serba, O.A. Slusar, T.V. Vlasyuk, V.M. Tytarenko, P.O. Chernenko, V.V. This paper describes the results of comparative studies of illumination currentvoltage characteristics and spectral characteristics of silicon solar cells with rear location of the collector p-n-junction for the cases of non-passivated and passivated front illuminated surface. Passivation was performed by silicon dioxide layer or ITO layer. It was found that ITO layer surface passivation with formation of ITO/silicon heterojunction, unlike silicon dioxide layer passivation, leads to a significant reduction of the effective surface recombination velocity. It significantly increases the value of the internal quantum efficiency in the wavelength range from 550 to 1050 nm and, as a result, significantly increases the value of short-circuit current of solar cells. 2015 Article Influence of nanostructured ITO films on surface recombination processes in silicon solar cells / V.P. Kostylyov, A.V. Sachenko, O.A. Serba, T.V. Slusar, V.M. Vlasyuk, P.O. Tytarenko, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 464-467. — Бібліогр.: 9 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.04.464 PACS 72.20.Jv, 73.50.Gr, 78.67.-n, 88.40.jj http://dspace.nbuv.gov.ua/handle/123456789/121277 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description This paper describes the results of comparative studies of illumination currentvoltage characteristics and spectral characteristics of silicon solar cells with rear location of the collector p-n-junction for the cases of non-passivated and passivated front illuminated surface. Passivation was performed by silicon dioxide layer or ITO layer. It was found that ITO layer surface passivation with formation of ITO/silicon heterojunction, unlike silicon dioxide layer passivation, leads to a significant reduction of the effective surface recombination velocity. It significantly increases the value of the internal quantum efficiency in the wavelength range from 550 to 1050 nm and, as a result, significantly increases the value of short-circuit current of solar cells.
format Article
author Kostylyov, V.P.
Sachenko, A.V.
Serba, O.A.
Slusar, T.V.
Vlasyuk, V.M.
Tytarenko, P.O.
Chernenko, V.V.
spellingShingle Kostylyov, V.P.
Sachenko, A.V.
Serba, O.A.
Slusar, T.V.
Vlasyuk, V.M.
Tytarenko, P.O.
Chernenko, V.V.
Influence of nanostructured ITO films on surface recombination processes in silicon solar cells
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Kostylyov, V.P.
Sachenko, A.V.
Serba, O.A.
Slusar, T.V.
Vlasyuk, V.M.
Tytarenko, P.O.
Chernenko, V.V.
author_sort Kostylyov, V.P.
title Influence of nanostructured ITO films on surface recombination processes in silicon solar cells
title_short Influence of nanostructured ITO films on surface recombination processes in silicon solar cells
title_full Influence of nanostructured ITO films on surface recombination processes in silicon solar cells
title_fullStr Influence of nanostructured ITO films on surface recombination processes in silicon solar cells
title_full_unstemmed Influence of nanostructured ITO films on surface recombination processes in silicon solar cells
title_sort influence of nanostructured ito films on surface recombination processes in silicon solar cells
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2015
url http://dspace.nbuv.gov.ua/handle/123456789/121277
citation_txt Influence of nanostructured ITO films on surface recombination processes in silicon solar cells / V.P. Kostylyov, A.V. Sachenko, O.A. Serba, T.V. Slusar, V.M. Vlasyuk, P.O. Tytarenko, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 464-467. — Бібліогр.: 9 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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