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Method of low-temperature rise of laser diode quality

Method of low-temperature rise of laser diode quality

In 1987 the authors of this article discovered the effect of irreversible gigantic modification (IGM) of semiconductors. Basing on the IGM phenomenon the authors have developed technological method that enables to considerably improve performances of laser diodes after their manufacturing by increas...

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Bibliographic Details
Main Authors: Kamuz, A.M., Oleksenko, P.Ph., Kamuz, O.A., Kamuz, V.G.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/121344
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http://dspace.nbuv.gov.ua/handle/123456789/121344

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