2025-02-22T17:09:14-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121344%22&qt=morelikethis&rows=5
2025-02-22T17:09:14-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121344%22&qt=morelikethis&rows=5
2025-02-22T17:09:14-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-22T17:09:14-05:00 DEBUG: Deserialized SOLR response
Method of low-temperature rise of laser diode quality
In 1987 the authors of this article discovered the effect of irreversible gigantic modification (IGM) of semiconductors. Basing on the IGM phenomenon the authors have developed technological method that enables to considerably improve performances of laser diodes after their manufacturing by increas...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
|
| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/121344 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| id |
irk-123456789-121344 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1213442017-06-15T03:03:28Z Method of low-temperature rise of laser diode quality Kamuz, A.M. Oleksenko, P.Ph. Kamuz, O.A. Kamuz, V.G. In 1987 the authors of this article discovered the effect of irreversible gigantic modification (IGM) of semiconductors. Basing on the IGM phenomenon the authors have developed technological method that enables to considerably improve performances of laser diodes after their manufacturing by increasing power, slope efficiency, and decreasing threshold current. The technology has been tested on the laser diodes of several US companies. We obtained the same results in improvement of all the diodes from these companies. Performances of the laser diodes with small slope efficiency and high threshold current were improved using this modification. Slope efficiency of laser diodes was increased by 2.3 or 3.7 times and the threshold current was decreased from 15 % up to 29 %. It is shown that modification depth of the semiconductor chip for these laser diodes exceeds 50 microns. Shown is that a beam divergence of laser diode can be decreased using the irreversible gigantic modification. 2002 Article Method of low-temperature rise of laser diode quality / A.M. Kamuz, P.Ph. Oleksenko, O.A. Kamuz, V.G. Kamuz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 406-411. — Бібліогр.: 4 назв. — англ. 1560-8034 PACS: 42.55.Px, 85.60.Jb http://dspace.nbuv.gov.ua/handle/123456789/121344 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
In 1987 the authors of this article discovered the effect of irreversible gigantic modification (IGM) of semiconductors. Basing on the IGM phenomenon the authors have developed technological method that enables to considerably improve performances of laser diodes after their manufacturing by increasing power, slope efficiency, and decreasing threshold current. The technology has been tested on the laser diodes of several US companies. We obtained the same results in improvement of all the diodes from these companies. Performances of the laser diodes with small slope efficiency and high threshold current were improved using this modification. Slope efficiency of laser diodes was increased by 2.3 or 3.7 times and the threshold current was decreased from 15 % up to 29 %. It is shown that modification depth of the semiconductor chip for these laser diodes exceeds 50 microns. Shown is that a beam divergence of laser diode can be decreased using the irreversible gigantic modification. |
| format |
Article |
| author |
Kamuz, A.M. Oleksenko, P.Ph. Kamuz, O.A. Kamuz, V.G. |
| spellingShingle |
Kamuz, A.M. Oleksenko, P.Ph. Kamuz, O.A. Kamuz, V.G. Method of low-temperature rise of laser diode quality Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Kamuz, A.M. Oleksenko, P.Ph. Kamuz, O.A. Kamuz, V.G. |
| author_sort |
Kamuz, A.M. |
| title |
Method of low-temperature rise of laser diode quality |
| title_short |
Method of low-temperature rise of laser diode quality |
| title_full |
Method of low-temperature rise of laser diode quality |
| title_fullStr |
Method of low-temperature rise of laser diode quality |
| title_full_unstemmed |
Method of low-temperature rise of laser diode quality |
| title_sort |
method of low-temperature rise of laser diode quality |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2002 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121344 |
| citation_txt |
Method of low-temperature rise of laser diode quality / A.M. Kamuz, P.Ph. Oleksenko, O.A. Kamuz, V.G. Kamuz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 406-411. — Бібліогр.: 4 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT kamuzam methodoflowtemperatureriseoflaserdiodequality AT oleksenkopph methodoflowtemperatureriseoflaserdiodequality AT kamuzoa methodoflowtemperatureriseoflaserdiodequality AT kamuzvg methodoflowtemperatureriseoflaserdiodequality |
| first_indexed |
2023-10-18T20:39:13Z |
| last_indexed |
2023-10-18T20:39:13Z |
| _version_ |
1796150762544300032 |