A universal automated complex for control and diagnostics of semiconductor devices and structures
We present a universal automated complex for control and diagnostics. It is intended to measure static, pulse and capacitance-voltage characteristics of two- and three-terminal networks, both at room temperature and in 77-1000 K temperature range. A distinguishing feature of complex construction is...
Збережено в:
Дата: | 2002 |
---|---|
Автори: | , , , |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
|
Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121359 |
Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | A universal automated complex for control and diagnostics of semiconductor devices and structures / R.V. Konakova, O.E. Rengevych, A.M. Kurakin, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 449-452. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraineid |
irk-123456789-121359 |
---|---|
record_format |
dspace |
spelling |
irk-123456789-1213592017-06-15T03:02:55Z A universal automated complex for control and diagnostics of semiconductor devices and structures Konakova, R.V. Rengevych, O.E. Kurakin, A.M. Kudryk, Ya.Ya. We present a universal automated complex for control and diagnostics. It is intended to measure static, pulse and capacitance-voltage characteristics of two- and three-terminal networks, both at room temperature and in 77-1000 K temperature range. A distinguishing feature of complex construction is the possibility for simulation of interrelation between parameters of the objects studied. The complex has been tested when studying the effect of g- and microwave radiations on parameters of gallium arsenide SB-FETs, GaN-based HEMTs and silicon carbide SBDs. 2002 Article A universal automated complex for control and diagnostics of semiconductor devices and structures / R.V. Konakova, O.E. Rengevych, A.M. Kurakin, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 449-452. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 85.30 http://dspace.nbuv.gov.ua/handle/123456789/121359 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
description |
We present a universal automated complex for control and diagnostics. It is intended to measure static, pulse and capacitance-voltage characteristics of two- and three-terminal networks, both at room temperature and in 77-1000 K temperature range. A distinguishing feature of complex construction is the possibility for simulation of interrelation between parameters of the objects studied. The complex has been tested when studying the effect of g- and microwave radiations on parameters of gallium arsenide SB-FETs, GaN-based HEMTs and silicon carbide SBDs. |
format |
Article |
author |
Konakova, R.V. Rengevych, O.E. Kurakin, A.M. Kudryk, Ya.Ya. |
spellingShingle |
Konakova, R.V. Rengevych, O.E. Kurakin, A.M. Kudryk, Ya.Ya. A universal automated complex for control and diagnostics of semiconductor devices and structures Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Konakova, R.V. Rengevych, O.E. Kurakin, A.M. Kudryk, Ya.Ya. |
author_sort |
Konakova, R.V. |
title |
A universal automated complex for control and diagnostics of semiconductor devices and structures |
title_short |
A universal automated complex for control and diagnostics of semiconductor devices and structures |
title_full |
A universal automated complex for control and diagnostics of semiconductor devices and structures |
title_fullStr |
A universal automated complex for control and diagnostics of semiconductor devices and structures |
title_full_unstemmed |
A universal automated complex for control and diagnostics of semiconductor devices and structures |
title_sort |
universal automated complex for control and diagnostics of semiconductor devices and structures |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2002 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/121359 |
citation_txt |
A universal automated complex for control and diagnostics of semiconductor devices and structures / R.V. Konakova, O.E. Rengevych, A.M. Kurakin, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 449-452. — Бібліогр.: 14 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
AT konakovarv auniversalautomatedcomplexforcontrolanddiagnosticsofsemiconductordevicesandstructures AT rengevychoe auniversalautomatedcomplexforcontrolanddiagnosticsofsemiconductordevicesandstructures AT kurakinam auniversalautomatedcomplexforcontrolanddiagnosticsofsemiconductordevicesandstructures AT kudrykyaya auniversalautomatedcomplexforcontrolanddiagnosticsofsemiconductordevicesandstructures AT konakovarv universalautomatedcomplexforcontrolanddiagnosticsofsemiconductordevicesandstructures AT rengevychoe universalautomatedcomplexforcontrolanddiagnosticsofsemiconductordevicesandstructures AT kurakinam universalautomatedcomplexforcontrolanddiagnosticsofsemiconductordevicesandstructures AT kudrykyaya universalautomatedcomplexforcontrolanddiagnosticsofsemiconductordevicesandstructures |
first_indexed |
2023-10-18T20:39:16Z |
last_indexed |
2023-10-18T20:39:16Z |
_version_ |
1796150764340510720 |