A universal automated complex for control and diagnostics of semiconductor devices and structures

We present a universal automated complex for control and diagnostics. It is intended to measure static, pulse and capacitance-voltage characteristics of two- and three-terminal networks, both at room temperature and in 77-1000 K temperature range. A distinguishing feature of complex construction is...

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Бібліографічні деталі
Дата:2002
Автори: Konakova, R.V., Rengevych, O.E., Kurakin, A.M., Kudryk, Ya.Ya.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121359
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:A universal automated complex for control and diagnostics of semiconductor devices and structures / R.V. Konakova, O.E. Rengevych, A.M. Kurakin, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 449-452. — Бібліогр.: 14 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-121359
record_format dspace
spelling irk-123456789-1213592017-06-15T03:02:55Z A universal automated complex for control and diagnostics of semiconductor devices and structures Konakova, R.V. Rengevych, O.E. Kurakin, A.M. Kudryk, Ya.Ya. We present a universal automated complex for control and diagnostics. It is intended to measure static, pulse and capacitance-voltage characteristics of two- and three-terminal networks, both at room temperature and in 77-1000 K temperature range. A distinguishing feature of complex construction is the possibility for simulation of interrelation between parameters of the objects studied. The complex has been tested when studying the effect of g- and microwave radiations on parameters of gallium arsenide SB-FETs, GaN-based HEMTs and silicon carbide SBDs. 2002 Article A universal automated complex for control and diagnostics of semiconductor devices and structures / R.V. Konakova, O.E. Rengevych, A.M. Kurakin, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 449-452. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 85.30 http://dspace.nbuv.gov.ua/handle/123456789/121359 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description We present a universal automated complex for control and diagnostics. It is intended to measure static, pulse and capacitance-voltage characteristics of two- and three-terminal networks, both at room temperature and in 77-1000 K temperature range. A distinguishing feature of complex construction is the possibility for simulation of interrelation between parameters of the objects studied. The complex has been tested when studying the effect of g- and microwave radiations on parameters of gallium arsenide SB-FETs, GaN-based HEMTs and silicon carbide SBDs.
format Article
author Konakova, R.V.
Rengevych, O.E.
Kurakin, A.M.
Kudryk, Ya.Ya.
spellingShingle Konakova, R.V.
Rengevych, O.E.
Kurakin, A.M.
Kudryk, Ya.Ya.
A universal automated complex for control and diagnostics of semiconductor devices and structures
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Konakova, R.V.
Rengevych, O.E.
Kurakin, A.M.
Kudryk, Ya.Ya.
author_sort Konakova, R.V.
title A universal automated complex for control and diagnostics of semiconductor devices and structures
title_short A universal automated complex for control and diagnostics of semiconductor devices and structures
title_full A universal automated complex for control and diagnostics of semiconductor devices and structures
title_fullStr A universal automated complex for control and diagnostics of semiconductor devices and structures
title_full_unstemmed A universal automated complex for control and diagnostics of semiconductor devices and structures
title_sort universal automated complex for control and diagnostics of semiconductor devices and structures
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2002
url http://dspace.nbuv.gov.ua/handle/123456789/121359
citation_txt A universal automated complex for control and diagnostics of semiconductor devices and structures / R.V. Konakova, O.E. Rengevych, A.M. Kurakin, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 449-452. — Бібліогр.: 14 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT konakovarv auniversalautomatedcomplexforcontrolanddiagnosticsofsemiconductordevicesandstructures
AT rengevychoe auniversalautomatedcomplexforcontrolanddiagnosticsofsemiconductordevicesandstructures
AT kurakinam auniversalautomatedcomplexforcontrolanddiagnosticsofsemiconductordevicesandstructures
AT kudrykyaya auniversalautomatedcomplexforcontrolanddiagnosticsofsemiconductordevicesandstructures
AT konakovarv universalautomatedcomplexforcontrolanddiagnosticsofsemiconductordevicesandstructures
AT rengevychoe universalautomatedcomplexforcontrolanddiagnosticsofsemiconductordevicesandstructures
AT kurakinam universalautomatedcomplexforcontrolanddiagnosticsofsemiconductordevicesandstructures
AT kudrykyaya universalautomatedcomplexforcontrolanddiagnosticsofsemiconductordevicesandstructures
first_indexed 2023-10-18T20:39:16Z
last_indexed 2023-10-18T20:39:16Z
_version_ 1796150764340510720