Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS
The theoretical analysis of carrier scattering mechanisms in electronic lead chalcogenide crystals was carried out. The calculation of carrier mobility in wide temperature (4.2-300 К) and concentration (10¹⁶-10²⁰ сm⁻³) ranges is carried out from the viewpoint of interaction of conductivity electrons...
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| Дата: | 2002 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121369 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS / D.M. Freik, L.I. Nykyruy, V.M. Shperun // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 362-367. — Бібліогр.: 25 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121369 |
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dspace |
| spelling |
irk-123456789-1213692017-06-15T03:04:39Z Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS Freik, D.M. Nykyruy, L.I. Shperun, V.M. The theoretical analysis of carrier scattering mechanisms in electronic lead chalcogenide crystals was carried out. The calculation of carrier mobility in wide temperature (4.2-300 К) and concentration (10¹⁶-10²⁰ сm⁻³) ranges is carried out from the viewpoint of interaction of conductivity electrons with deformation potentials of acoustic and optical phonons, polarizing potential of optical phonons, screening Coulombic and short-range potentials of vacancies. It has been shown that the agreement of theoretical and experimental results takes place when taking into account the carrier scattering both on phonons and ionized vacancies. 2002 Article Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS / D.M. Freik, L.I. Nykyruy, V.M. Shperun // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 362-367. — Бібліогр.: 25 назв. — англ. 1560-8034 PACS: 71.15.Cr, 72.10.-d, 72.20.-Dp. http://dspace.nbuv.gov.ua/handle/123456789/121369 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The theoretical analysis of carrier scattering mechanisms in electronic lead chalcogenide crystals was carried out. The calculation of carrier mobility in wide temperature (4.2-300 К) and concentration (10¹⁶-10²⁰ сm⁻³) ranges is carried out from the viewpoint of interaction of conductivity electrons with deformation potentials of acoustic and optical phonons, polarizing potential of optical phonons, screening Coulombic and short-range potentials of vacancies. It has been shown that the agreement of theoretical and experimental results takes place when taking into account the carrier scattering both on phonons and ionized vacancies. |
| format |
Article |
| author |
Freik, D.M. Nykyruy, L.I. Shperun, V.M. |
| spellingShingle |
Freik, D.M. Nykyruy, L.I. Shperun, V.M. Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Freik, D.M. Nykyruy, L.I. Shperun, V.M. |
| author_sort |
Freik, D.M. |
| title |
Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS |
| title_short |
Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS |
| title_full |
Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS |
| title_fullStr |
Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS |
| title_full_unstemmed |
Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS |
| title_sort |
scattering mechanisms of electrons in monocrystalline pbte, pbse and pbs |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2002 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121369 |
| citation_txt |
Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS / D.M. Freik, L.I. Nykyruy, V.M. Shperun // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 362-367. — Бібліогр.: 25 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT freikdm scatteringmechanismsofelectronsinmonocrystallinepbtepbseandpbs AT nykyruyli scatteringmechanismsofelectronsinmonocrystallinepbtepbseandpbs AT shperunvm scatteringmechanismsofelectronsinmonocrystallinepbtepbseandpbs |
| first_indexed |
2023-10-18T20:39:17Z |
| last_indexed |
2023-10-18T20:39:17Z |
| _version_ |
1796150763177639936 |