Fabrication and electrical characteristics of nano black phosphorus thin film transistor
This text introduced a method to fabricate black phosphorus(BP) nanosheet field effect transistor(FET). The X ray diffraction analysis, scanning electron microscopy, and FET performance of the black phosphorus products were analyzed, and the output characteristic curves and the transfer characterist...
Збережено в:
| Дата: | 2016 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2016
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| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121408 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Fabrication and electrical characteristics of nano black phosphorus thin film transistor / Wang Lie-long // Functional Materials. — 2016. — Т. 23, № 3. — С. 404-407. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | This text introduced a method to fabricate black phosphorus(BP) nanosheet field effect transistor(FET). The X ray diffraction analysis, scanning electron microscopy, and FET performance of the black phosphorus products were analyzed, and the output characteristic curves and the transfer characteristic curves were obtained. When BP's thickness was 14nm, the hole mobility was 244 cm2/Vs and on/off ratio was ~10³. The result shows that black phosphorus nanosheet field effect transistor has good on/off ratio and hole mobility. It will lay an important foundation for future optoelectronic devices as an alternative material. |
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