Fabrication and electrical characteristics of nano black phosphorus thin film transistor
This text introduced a method to fabricate black phosphorus(BP) nanosheet field effect transistor(FET). The X ray diffraction analysis, scanning electron microscopy, and FET performance of the black phosphorus products were analyzed, and the output characteristic curves and the transfer characterist...
Збережено в:
| Дата: | 2016 |
|---|---|
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2016
|
| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121408 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Fabrication and electrical characteristics of nano black phosphorus thin film transistor / Wang Lie-long // Functional Materials. — 2016. — Т. 23, № 3. — С. 404-407. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121408 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1214082017-06-15T03:03:04Z Fabrication and electrical characteristics of nano black phosphorus thin film transistor Wang Lie-long Characterization and properties This text introduced a method to fabricate black phosphorus(BP) nanosheet field effect transistor(FET). The X ray diffraction analysis, scanning electron microscopy, and FET performance of the black phosphorus products were analyzed, and the output characteristic curves and the transfer characteristic curves were obtained. When BP's thickness was 14nm, the hole mobility was 244 cm2/Vs and on/off ratio was ~10³. The result shows that black phosphorus nanosheet field effect transistor has good on/off ratio and hole mobility. It will lay an important foundation for future optoelectronic devices as an alternative material. 2016 Article Fabrication and electrical characteristics of nano black phosphorus thin film transistor / Wang Lie-long // Functional Materials. — 2016. — Т. 23, № 3. — С. 404-407. — Бібліогр.: 15 назв. — англ. 1027-5495 DOI: dx.doi.org/10.15407/fm23.03.404 http://dspace.nbuv.gov.ua/handle/123456789/121408 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Characterization and properties Characterization and properties |
| spellingShingle |
Characterization and properties Characterization and properties Wang Lie-long Fabrication and electrical characteristics of nano black phosphorus thin film transistor Functional Materials |
| description |
This text introduced a method to fabricate black phosphorus(BP) nanosheet field effect transistor(FET). The X ray diffraction analysis, scanning electron microscopy, and FET performance of the black phosphorus products were analyzed, and the output characteristic curves and the transfer characteristic curves were obtained. When BP's thickness was 14nm, the hole mobility was 244 cm2/Vs and on/off ratio was ~10³. The result shows that black phosphorus nanosheet field effect transistor has good on/off ratio and hole mobility. It will lay an important foundation for future optoelectronic devices as an alternative material. |
| format |
Article |
| author |
Wang Lie-long |
| author_facet |
Wang Lie-long |
| author_sort |
Wang Lie-long |
| title |
Fabrication and electrical characteristics of nano black phosphorus thin film transistor |
| title_short |
Fabrication and electrical characteristics of nano black phosphorus thin film transistor |
| title_full |
Fabrication and electrical characteristics of nano black phosphorus thin film transistor |
| title_fullStr |
Fabrication and electrical characteristics of nano black phosphorus thin film transistor |
| title_full_unstemmed |
Fabrication and electrical characteristics of nano black phosphorus thin film transistor |
| title_sort |
fabrication and electrical characteristics of nano black phosphorus thin film transistor |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2016 |
| topic_facet |
Characterization and properties |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121408 |
| citation_txt |
Fabrication and electrical characteristics of nano black phosphorus thin film transistor / Wang Lie-long // Functional Materials. — 2016. — Т. 23, № 3. — С. 404-407. — Бібліогр.: 15 назв. — англ. |
| series |
Functional Materials |
| work_keys_str_mv |
AT wanglielong fabricationandelectricalcharacteristicsofnanoblackphosphorusthinfilmtransistor |
| first_indexed |
2023-10-18T20:39:22Z |
| last_indexed |
2023-10-18T20:39:22Z |
| _version_ |
1796150769225826304 |