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Simulation of strain fields in GaSb/InAs heteroepitaxial system
Mechanical strains taking place in GaSb/InAs heterosystem in the presence of misfit dislocation network are investigated. Distributions of energy of strains and deformations in the system with misfit dislocation network were found using two-dimensional simulation. The radius of the dislocation core,...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/121427 |
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irk-123456789-1214272017-06-15T03:03:42Z Simulation of strain fields in GaSb/InAs heteroepitaxial system Shutov, S.V. Baganov, Ye.A. Mechanical strains taking place in GaSb/InAs heterosystem in the presence of misfit dislocation network are investigated. Distributions of energy of strains and deformations in the system with misfit dislocation network were found using two-dimensional simulation. The radius of the dislocation core, depths of the strain penetration into the substrate and epitaxial layer as well as change of the material bandgaps near the heterointerface were calculated. 2006 Article Simulation of strain fields in GaSb/InAs heteroepitaxial system / S.V. Shutov, Ye.A. Baganov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 23-25. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 81.05.Ea, 83.85.St, 68.35.Ct http://dspace.nbuv.gov.ua/handle/123456789/121427 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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English |
| description |
Mechanical strains taking place in GaSb/InAs heterosystem in the presence of misfit dislocation network are investigated. Distributions of energy of strains and deformations in the system with misfit dislocation network were found using two-dimensional simulation. The radius of the dislocation core, depths of the strain penetration into the substrate and epitaxial layer as well as change of the material bandgaps near the heterointerface were calculated. |
| format |
Article |
| author |
Shutov, S.V. Baganov, Ye.A. |
| spellingShingle |
Shutov, S.V. Baganov, Ye.A. Simulation of strain fields in GaSb/InAs heteroepitaxial system Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Shutov, S.V. Baganov, Ye.A. |
| author_sort |
Shutov, S.V. |
| title |
Simulation of strain fields in GaSb/InAs heteroepitaxial system |
| title_short |
Simulation of strain fields in GaSb/InAs heteroepitaxial system |
| title_full |
Simulation of strain fields in GaSb/InAs heteroepitaxial system |
| title_fullStr |
Simulation of strain fields in GaSb/InAs heteroepitaxial system |
| title_full_unstemmed |
Simulation of strain fields in GaSb/InAs heteroepitaxial system |
| title_sort |
simulation of strain fields in gasb/inas heteroepitaxial system |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2006 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121427 |
| citation_txt |
Simulation of strain fields in GaSb/InAs heteroepitaxial system / S.V. Shutov, Ye.A. Baganov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 23-25. — Бібліогр.: 7 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT shutovsv simulationofstrainfieldsingasbinasheteroepitaxialsystem AT baganovyea simulationofstrainfieldsingasbinasheteroepitaxialsystem |
| first_indexed |
2023-10-18T20:39:25Z |
| last_indexed |
2023-10-18T20:39:25Z |
| _version_ |
1796150774405791744 |