2025-02-23T14:46:37-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121427%22&qt=morelikethis&rows=5
2025-02-23T14:46:37-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121427%22&qt=morelikethis&rows=5
2025-02-23T14:46:37-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T14:46:37-05:00 DEBUG: Deserialized SOLR response
Simulation of strain fields in GaSb/InAs heteroepitaxial system
Mechanical strains taking place in GaSb/InAs heterosystem in the presence of misfit dislocation network are investigated. Distributions of energy of strains and deformations in the system with misfit dislocation network were found using two-dimensional simulation. The radius of the dislocation core,...
Saved in:
Main Authors: | Shutov, S.V., Baganov, Ye.A. |
---|---|
Format: | Article |
Language: | English |
Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
|
Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/121427 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
2025-02-23T14:46:37-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121427%22&qt=morelikethis
2025-02-23T14:46:37-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121427%22&qt=morelikethis
2025-02-23T14:46:37-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T14:46:37-05:00 DEBUG: Deserialized SOLR response
Similar Items
-
Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase
by: Shutov, S.V., et al.
Published: (2006) -
Chemical polishing of InAs, InSb, GaAs and GaSb
by: Levchenko, I.V., et al.
Published: (2017) -
Выращивание гетероструктур GaSb/InAs жидкофазной эпитаксией без растворения подложки
by: Марончук, И.Е., et al.
Published: (2003) -
Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition
by: Levchenko, I.V., et al.
Published: (2018) -
Superconductivity and weak anti-localization in GaSb whiskers under strain
by: N. Liakh-Kaguy, et al.
Published: (2019)