Mass-spectrometric investigations of gas evolution
Method of mass-spectrometry with time-of-flight recording of the desorbed products was used to study the gas evolution of impurities from the subsurface layer of Si crystals molten by the electron beam (of ~2 mm² area) in the vacuum of 10⁻⁵ – 10⁻⁷ Pa. It is shown that irrespective of vacuum level, o...
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| Дата: | 2006 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121441 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Mass-spectrometric investigations of gas evolution / Yu.A. Asnis, P.I. Baranskii, V.M. Babich, S.P. Zabolotin, Yu.G. Ptushinskii, V.G. Sukretnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 4-7. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1214412017-06-15T03:05:43Z Mass-spectrometric investigations of gas evolution Asnis, Yu.A. Baranskii, P.I. Babich, V.M. Zabolotin, S.P. Ptushinskii, Yu.G. Sukretnyi, V.G. Method of mass-spectrometry with time-of-flight recording of the desorbed products was used to study the gas evolution of impurities from the subsurface layer of Si crystals molten by the electron beam (of ~2 mm² area) in the vacuum of 10⁻⁵ – 10⁻⁷ Pa. It is shown that irrespective of vacuum level, oxygen (m = 32) and hydrogen (m = 2) in the molecular state as well as Si atoms (m = 28) are registered as the main components of gas evolution in the mass-spectrum in melting. With longer time of the subsurface layer exposure in the molten state, an indication of CO evolution (fragment peak m = 12) appears in the mass-spectrum. There is, however, a ground to believe that this is the consequence of gas evolution from the fixtures, and not from the Si sample. Features of gas evolution were revealed at the initial stage of heating and melting of Si sample, depending on the previous heat-treatment of the sample. If melting the subsurface zone proceeds after contact with the atmosphere, initial peaks of evolution of oxygen and hydrogen molecules and Si atoms are observed. These are partially weakened with further keeping the sample in the molten state. In our opinion, such a peak is due to contamination of the surface at such a contact. A long-term exposure in vacuum of a sample cooled after melting does not lead to appearance of the above peak at subsequent melting. 2006 Article Mass-spectrometric investigations of gas evolution / Yu.A. Asnis, P.I. Baranskii, V.M. Babich, S.P. Zabolotin, Yu.G. Ptushinskii, V.G. Sukretnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 4-7. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS 81.05.Cy http://dspace.nbuv.gov.ua/handle/123456789/121441 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Method of mass-spectrometry with time-of-flight recording of the desorbed products was used to study the gas evolution of impurities from the subsurface layer of Si crystals molten by the electron beam (of ~2 mm² area) in the vacuum of 10⁻⁵ – 10⁻⁷ Pa. It is shown that irrespective of vacuum level, oxygen (m = 32) and hydrogen (m = 2) in the molecular state as well as Si atoms (m = 28) are registered as the main components of gas evolution in the mass-spectrum in melting. With longer time of the subsurface layer exposure in the molten state, an indication of CO evolution (fragment peak m = 12) appears in the mass-spectrum. There is, however, a ground to believe that this is the consequence of gas evolution from the fixtures, and not from the Si sample. Features of gas evolution were revealed at the initial stage of heating and melting of Si sample, depending on the previous heat-treatment of the sample. If melting the subsurface zone proceeds after contact with the atmosphere, initial peaks of evolution of oxygen and hydrogen molecules and Si atoms are observed. These are partially weakened with further keeping the sample in the molten state. In our opinion, such a peak is due to contamination of the surface at such a contact. A long-term exposure in vacuum of a sample cooled after melting does not lead to appearance of the above peak at subsequent melting. |
| format |
Article |
| author |
Asnis, Yu.A. Baranskii, P.I. Babich, V.M. Zabolotin, S.P. Ptushinskii, Yu.G. Sukretnyi, V.G. |
| spellingShingle |
Asnis, Yu.A. Baranskii, P.I. Babich, V.M. Zabolotin, S.P. Ptushinskii, Yu.G. Sukretnyi, V.G. Mass-spectrometric investigations of gas evolution Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Asnis, Yu.A. Baranskii, P.I. Babich, V.M. Zabolotin, S.P. Ptushinskii, Yu.G. Sukretnyi, V.G. |
| author_sort |
Asnis, Yu.A. |
| title |
Mass-spectrometric investigations of gas evolution |
| title_short |
Mass-spectrometric investigations of gas evolution |
| title_full |
Mass-spectrometric investigations of gas evolution |
| title_fullStr |
Mass-spectrometric investigations of gas evolution |
| title_full_unstemmed |
Mass-spectrometric investigations of gas evolution |
| title_sort |
mass-spectrometric investigations of gas evolution |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2006 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121441 |
| citation_txt |
Mass-spectrometric investigations of gas evolution / Yu.A. Asnis, P.I. Baranskii, V.M. Babich, S.P. Zabolotin, Yu.G. Ptushinskii, V.G. Sukretnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 4-7. — Бібліогр.: 6 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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