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Mass-spectrometric investigations of gas evolution

Method of mass-spectrometry with time-of-flight recording of the desorbed products was used to study the gas evolution of impurities from the subsurface layer of Si crystals molten by the electron beam (of ~2 mm² area) in the vacuum of 10⁻⁵ – 10⁻⁷ Pa. It is shown that irrespective of vacuum level, o...

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Bibliographic Details
Main Authors: Asnis, Yu.A., Baranskii, P.I., Babich, V.M., Zabolotin, S.P., Ptushinskii, Yu.G., Sukretnyi, V.G.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/121441
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