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Mass-spectrometric investigations of gas evolution
Method of mass-spectrometry with time-of-flight recording of the desorbed products was used to study the gas evolution of impurities from the subsurface layer of Si crystals molten by the electron beam (of ~2 mm² area) in the vacuum of 10⁻⁵ – 10⁻⁷ Pa. It is shown that irrespective of vacuum level, o...
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Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/121441 |
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