Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)

Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)

In this paper, different methods for lowering the dislocation density such as incorporation of the buffer layers, substrate patterning and nitridation, silan-ammonia treatment are reviewed and compared. Advantages and limitations of these methods as well as a specific mechanism to reduce the disloca...

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Дата:2016
Автори: Parphenyuk, P.V., Evtukh, A.A.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121516
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) / P.V. Parphenyuk, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 1-8. — Бібліогр.: 78 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1215162017-06-15T03:05:39Z Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) Parphenyuk, P.V. Evtukh, A.A. In this paper, different methods for lowering the dislocation density such as incorporation of the buffer layers, substrate patterning and nitridation, silan-ammonia treatment are reviewed and compared. Advantages and limitations of these methods as well as a specific mechanism to reduce the dislocation amount are discussed. Usually, high densities of threading dislocations within the range 10¹⁰…10¹¹ cm⁻² are present in typical thin nitride films that are directly grown on sapphire substrate. Using these methods for substrate preparation, the density of dislocations can be reduced to the value 1·10⁷ cm⁻². An important process that enables to obtain the high-quality GaN layers with the low dislocation density is patterning the sapphire substrate. The dislocation density of these substrates depends on the pattern shape and orientation of patterned strips on cplane sapphire. Layers of GaN grown on a cone-shaped pattern have the lowest dislocation density. In addition, patterning the sapphire substrate increases the external quantum efficiency of radiative structures and reduces the mechanical stresses in the nitride layers. 2016 Article Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) / P.V. Parphenyuk, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 1-8. — Бібліогр.: 78 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.01.001 PACS 61.72, 81.15 http://dspace.nbuv.gov.ua/handle/123456789/121516 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description In this paper, different methods for lowering the dislocation density such as incorporation of the buffer layers, substrate patterning and nitridation, silan-ammonia treatment are reviewed and compared. Advantages and limitations of these methods as well as a specific mechanism to reduce the dislocation amount are discussed. Usually, high densities of threading dislocations within the range 10¹⁰…10¹¹ cm⁻² are present in typical thin nitride films that are directly grown on sapphire substrate. Using these methods for substrate preparation, the density of dislocations can be reduced to the value 1·10⁷ cm⁻². An important process that enables to obtain the high-quality GaN layers with the low dislocation density is patterning the sapphire substrate. The dislocation density of these substrates depends on the pattern shape and orientation of patterned strips on cplane sapphire. Layers of GaN grown on a cone-shaped pattern have the lowest dislocation density. In addition, patterning the sapphire substrate increases the external quantum efficiency of radiative structures and reduces the mechanical stresses in the nitride layers.
format Article
author Parphenyuk, P.V.
Evtukh, A.A.
spellingShingle Parphenyuk, P.V.
Evtukh, A.A.
Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Parphenyuk, P.V.
Evtukh, A.A.
author_sort Parphenyuk, P.V.
title Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)
title_short Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)
title_full Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)
title_fullStr Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)
title_full_unstemmed Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)
title_sort lowering the density of dislocations in heteroepitaxial iii-nitride layers: effect of sapphire substrate treatment (review)
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2016
url http://dspace.nbuv.gov.ua/handle/123456789/121516
citation_txt Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) / P.V. Parphenyuk, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 1-8. — Бібліогр.: 78 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT parphenyukpv loweringthedensityofdislocationsinheteroepitaxialiiinitridelayerseffectofsapphiresubstratetreatmentreview
AT evtukhaa loweringthedensityofdislocationsinheteroepitaxialiiinitridelayerseffectofsapphiresubstratetreatmentreview
first_indexed 2023-10-18T20:39:44Z
last_indexed 2023-10-18T20:39:44Z
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