Conductance relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn) films in inhomogeneous electrical field

The conductance relaxation of Langmuir-Blodgett films of manganese phthalocyanine in inhomogeneous electrical field was studied. Inhomogeneous electrical field was achieved by using the lateral surface of reverse-biased Si p-n junction. The conductance of new film increases up to saturation with the...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2005
Автори: Kazantseva, Z., Kislyuk, V., Kozyarevych, I., Lozovski, V., Tretyak, O.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121569
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Conductance relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn) films in inhomogeneous electrical field / Z. Kazantseva, V. Kislyuk, I. Kozyarevych, V. Lozovski, O. Tretyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 80-84. — Бібліогр.: 14 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-121569
record_format dspace
spelling irk-123456789-1215692017-06-15T03:02:58Z Conductance relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn) films in inhomogeneous electrical field Kazantseva, Z. Kislyuk, V. Kozyarevych, I. Lozovski, V. Tretyak, O. The conductance relaxation of Langmuir-Blodgett films of manganese phthalocyanine in inhomogeneous electrical field was studied. Inhomogeneous electrical field was achieved by using the lateral surface of reverse-biased Si p-n junction. The conductance of new film increases up to saturation with the characteristic time about 10 hours. After that the film has been kept in air for a long time (about 50 days), on application of the back bias the conductance slowly decreased with the characteristic time more than 10 hours. These properties are associated with appearance or disappearance of the bonds between molecular stacks in the film. 2005 Article Conductance relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn) films in inhomogeneous electrical field / Z. Kazantseva, V. Kislyuk, I. Kozyarevych, V. Lozovski, O. Tretyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 80-84. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 68.47.Fg, 68.47.Pe, 72.80.Le http://dspace.nbuv.gov.ua/handle/123456789/121569 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The conductance relaxation of Langmuir-Blodgett films of manganese phthalocyanine in inhomogeneous electrical field was studied. Inhomogeneous electrical field was achieved by using the lateral surface of reverse-biased Si p-n junction. The conductance of new film increases up to saturation with the characteristic time about 10 hours. After that the film has been kept in air for a long time (about 50 days), on application of the back bias the conductance slowly decreased with the characteristic time more than 10 hours. These properties are associated with appearance or disappearance of the bonds between molecular stacks in the film.
format Article
author Kazantseva, Z.
Kislyuk, V.
Kozyarevych, I.
Lozovski, V.
Tretyak, O.
spellingShingle Kazantseva, Z.
Kislyuk, V.
Kozyarevych, I.
Lozovski, V.
Tretyak, O.
Conductance relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn) films in inhomogeneous electrical field
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Kazantseva, Z.
Kislyuk, V.
Kozyarevych, I.
Lozovski, V.
Tretyak, O.
author_sort Kazantseva, Z.
title Conductance relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn) films in inhomogeneous electrical field
title_short Conductance relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn) films in inhomogeneous electrical field
title_full Conductance relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn) films in inhomogeneous electrical field
title_fullStr Conductance relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn) films in inhomogeneous electrical field
title_full_unstemmed Conductance relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn) films in inhomogeneous electrical field
title_sort conductance relaxation in langmuir-blodgett manganese phthalocyanine (pcmn) films in inhomogeneous electrical field
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2005
url http://dspace.nbuv.gov.ua/handle/123456789/121569
citation_txt Conductance relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn) films in inhomogeneous electrical field / Z. Kazantseva, V. Kislyuk, I. Kozyarevych, V. Lozovski, O. Tretyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 80-84. — Бібліогр.: 14 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT kazantsevaz conductancerelaxationinlangmuirblodgettmanganesephthalocyaninepcmnfilmsininhomogeneouselectricalfield
AT kislyukv conductancerelaxationinlangmuirblodgettmanganesephthalocyaninepcmnfilmsininhomogeneouselectricalfield
AT kozyarevychi conductancerelaxationinlangmuirblodgettmanganesephthalocyaninepcmnfilmsininhomogeneouselectricalfield
AT lozovskiv conductancerelaxationinlangmuirblodgettmanganesephthalocyaninepcmnfilmsininhomogeneouselectricalfield
AT tretyako conductancerelaxationinlangmuirblodgettmanganesephthalocyaninepcmnfilmsininhomogeneouselectricalfield
first_indexed 2023-10-18T20:39:33Z
last_indexed 2023-10-18T20:39:33Z
_version_ 1796150773029011456