Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase
Influence of strains that appear in GaSb/InAs heterosystem on heteroepitaxial layer planarity is considered. It is shown that minimal supercooling of solution-melt at the saturation temperature of gallium antimonide in gallium melt 450 ºC is 7.8 ºС for [111] and 5.8 ºС for [100] growth directions. C...
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| Дата: | 2006 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121579 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase / S.V. Shutov, Ye.A. Baganov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 84-87. — Бібліогр.: 17 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1215792017-06-15T03:05:35Z Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase Shutov, S.V. Baganov, Ye.A. Influence of strains that appear in GaSb/InAs heterosystem on heteroepitaxial layer planarity is considered. It is shown that minimal supercooling of solution-melt at the saturation temperature of gallium antimonide in gallium melt 450 ºC is 7.8 ºС for [111] and 5.8 ºС for [100] growth directions. Calculated are the minimal growth rate 22 nm/s that is necessary for prevention of distortion appearance of epitaxial layer surface caused by elastic strains and the critical thicknesses of misfit dislocation formation – 50 and 54 nm for the [100] and [111] growth directions, respectively. It is shown experimentally that the lack of minimal supercooling leads to the island growth mode. 2006 Article Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase / S.V. Shutov, Ye.A. Baganov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 84-87. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 81.05.Ea, 81.15.Lm http://dspace.nbuv.gov.ua/handle/123456789/121579 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Influence of strains that appear in GaSb/InAs heterosystem on heteroepitaxial layer planarity is considered. It is shown that minimal supercooling of solution-melt at the saturation temperature of gallium antimonide in gallium melt 450 ºC is 7.8 ºС for [111] and 5.8 ºС for [100] growth directions. Calculated are the minimal growth rate 22 nm/s that is necessary for prevention of distortion appearance of epitaxial layer surface caused by elastic strains and the critical thicknesses of misfit dislocation formation – 50 and 54 nm for the [100] and [111] growth directions, respectively. It is shown experimentally that the lack of minimal supercooling leads to the island growth mode. |
| format |
Article |
| author |
Shutov, S.V. Baganov, Ye.A. |
| spellingShingle |
Shutov, S.V. Baganov, Ye.A. Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Shutov, S.V. Baganov, Ye.A. |
| author_sort |
Shutov, S.V. |
| title |
Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase |
| title_short |
Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase |
| title_full |
Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase |
| title_fullStr |
Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase |
| title_full_unstemmed |
Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase |
| title_sort |
elastic strains influence during gasb/inas heteroepitaxy from liquid phase |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2006 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121579 |
| citation_txt |
Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase / S.V. Shutov, Ye.A. Baganov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 84-87. — Бібліогр.: 17 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT shutovsv elasticstrainsinfluenceduringgasbinasheteroepitaxyfromliquidphase AT baganovyea elasticstrainsinfluenceduringgasbinasheteroepitaxyfromliquidphase |
| first_indexed |
2023-10-18T20:39:34Z |
| last_indexed |
2023-10-18T20:39:34Z |
| _version_ |
1796150783013552128 |