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Photoresponse in Ge/Si nanostructures with quantum dots

Photoresponse in Ge/Si nanostructures with quantum dots

Photovoltaic properties of Si samples with Ge quantum dots were studied. Photosensitivity spectra and current-voltage characteristics at 90 and 290 K were investigated. Negative photoconductivity of samples was revealed in the spectral range of 0.6 to 1.1 eV. Irregular temperature dependence of phot...

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Bibliographic Details
Main Authors: Nikolenko, A.S., Kondratenko, S.V., Vakulenko, O.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/121590
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http://dspace.nbuv.gov.ua/handle/123456789/121590

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