Photoresponse in Ge/Si nanostructures with quantum dots

Photovoltaic properties of Si samples with Ge quantum dots were studied. Photosensitivity spectra and current-voltage characteristics at 90 and 290 K were investigated. Negative photoconductivity of samples was revealed in the spectral range of 0.6 to 1.1 eV. Irregular temperature dependence of phot...

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Дата:2006
Автори: Nikolenko, A.S., Kondratenko, S.V., Vakulenko, O.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121590
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Photoresponse in Ge/Si nanostructures with quantum dots / A.S. Nikolenko, S.V. Kondratenko, O.V. Vakulenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 32-35. — Бібліогр.: 21 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1215902017-06-15T03:03:42Z Photoresponse in Ge/Si nanostructures with quantum dots Nikolenko, A.S. Kondratenko, S.V. Vakulenko, O.V. Photovoltaic properties of Si samples with Ge quantum dots were studied. Photosensitivity spectra and current-voltage characteristics at 90 and 290 K were investigated. Negative photoconductivity of samples was revealed in the spectral range of 0.6 to 1.1 eV. Irregular temperature dependence of photo-emf in the temperature interval from 100 to 250 K was measured and analyzed. 2006 Article Photoresponse in Ge/Si nanostructures with quantum dots / A.S. Nikolenko, S.V. Kondratenko, O.V. Vakulenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 32-35. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS 73.63.-8, 73.63.Kv http://dspace.nbuv.gov.ua/handle/123456789/121590 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Photovoltaic properties of Si samples with Ge quantum dots were studied. Photosensitivity spectra and current-voltage characteristics at 90 and 290 K were investigated. Negative photoconductivity of samples was revealed in the spectral range of 0.6 to 1.1 eV. Irregular temperature dependence of photo-emf in the temperature interval from 100 to 250 K was measured and analyzed.
format Article
author Nikolenko, A.S.
Kondratenko, S.V.
Vakulenko, O.V.
spellingShingle Nikolenko, A.S.
Kondratenko, S.V.
Vakulenko, O.V.
Photoresponse in Ge/Si nanostructures with quantum dots
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Nikolenko, A.S.
Kondratenko, S.V.
Vakulenko, O.V.
author_sort Nikolenko, A.S.
title Photoresponse in Ge/Si nanostructures with quantum dots
title_short Photoresponse in Ge/Si nanostructures with quantum dots
title_full Photoresponse in Ge/Si nanostructures with quantum dots
title_fullStr Photoresponse in Ge/Si nanostructures with quantum dots
title_full_unstemmed Photoresponse in Ge/Si nanostructures with quantum dots
title_sort photoresponse in ge/si nanostructures with quantum dots
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2006
url http://dspace.nbuv.gov.ua/handle/123456789/121590
citation_txt Photoresponse in Ge/Si nanostructures with quantum dots / A.S. Nikolenko, S.V. Kondratenko, O.V. Vakulenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 32-35. — Бібліогр.: 21 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT nikolenkoas photoresponseingesinanostructureswithquantumdots
AT kondratenkosv photoresponseingesinanostructureswithquantumdots
AT vakulenkoov photoresponseingesinanostructureswithquantumdots
first_indexed 2023-10-18T20:39:35Z
last_indexed 2023-10-18T20:39:35Z
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