Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials
In the work, non-destructive testing the Si and Ge semiconductors by pulse X-ray sources is discussed. Mathematical simulation of the radiation generation in reflection and transmission anode tubes is performed. Details of energy spectrum formation in these pulse tubes are analyzed, and its transfor...
Збережено в:
| Дата: | 2006 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121595 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials / S.V. Denbnovetsky, N.V. Slobodyan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 68-72. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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dspace |
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irk-123456789-1215952017-06-15T03:05:21Z Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials Denbnovetsky, S.V. Slobodyan, N.V. In the work, non-destructive testing the Si and Ge semiconductors by pulse X-ray sources is discussed. Mathematical simulation of the radiation generation in reflection and transmission anode tubes is performed. Details of energy spectrum formation in these pulse tubes are analyzed, and its transformation when passing through thin samples of semiconductor materials is discussed. The dependence of the amount of radiation absorbed by the samples on the amplitude of acceleration voltage is calculated. It is shown how the pulse operation regime and design features of pulse tubes influence the characteristics of the X-ray radiation. 2006 Article Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials / S.V. Denbnovetsky, N.V. Slobodyan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 68-72. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 61.10.Nz http://dspace.nbuv.gov.ua/handle/123456789/121595 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
In the work, non-destructive testing the Si and Ge semiconductors by pulse X-ray sources is discussed. Mathematical simulation of the radiation generation in reflection and transmission anode tubes is performed. Details of energy spectrum formation in these pulse tubes are analyzed, and its transformation when passing through thin samples of semiconductor materials is discussed. The dependence of the amount of radiation absorbed by the samples on the amplitude of acceleration voltage is calculated. It is shown how the pulse operation regime and design features of pulse tubes influence the characteristics of the X-ray radiation. |
| format |
Article |
| author |
Denbnovetsky, S.V. Slobodyan, N.V. |
| spellingShingle |
Denbnovetsky, S.V. Slobodyan, N.V. Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Denbnovetsky, S.V. Slobodyan, N.V. |
| author_sort |
Denbnovetsky, S.V. |
| title |
Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials |
| title_short |
Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials |
| title_full |
Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials |
| title_fullStr |
Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials |
| title_full_unstemmed |
Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials |
| title_sort |
simulation of radiation characteristics of pulse x-ray devices for non-destructive testing the semiconductor materials |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2006 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121595 |
| citation_txt |
Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials / S.V. Denbnovetsky, N.V. Slobodyan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 68-72. — Бібліогр.: 10 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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AT denbnovetskysv simulationofradiationcharacteristicsofpulsexraydevicesfornondestructivetestingthesemiconductormaterials AT slobodyannv simulationofradiationcharacteristicsofpulsexraydevicesfornondestructivetestingthesemiconductormaterials |
| first_indexed |
2023-10-18T20:39:36Z |
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2023-10-18T20:39:36Z |
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