Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique

• Дата: 2016
• Автори: Studenyak, I.P., Kutsyk, M.M., Studenyak, V.I., Bendak, A.V., Izai, V.Yu., Kúš, P., Mikula, M.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/121605
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique / I.P. Studenyak, M.M. Kutsyk, V.I. Studenyak, A.V. Bendak, V.Yu. Izai, P. Kúš, M. Mikula // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 307-310. — Бібліогр.: 12 назв. — англ.

Cu₆.₃₅P₁.₇₇S₄.₇₂Br₀.₁₅ thin film was obtained using the high target utilization sputtering onto c-cut sapphire substrates. X-ray diffraction studies show the film to be amorphous with some crystalline inclusions. SEM investigations indicate formation of periodical “forest-like” quasi-two-dimensional pillared structure. Electrical conductivity of Cu₆.₃₅P₁.₇₇S₄.₇₂Br₀.₁₅ thin film was measured in the temperature interval 4.5…300 K, three regions with different activation energy were revealed. Optical constants were obtained using the technique of spectroscopic ellipsometry and used for calculation of optical absorption spectrum. Optical absorption edge has an exponential form, the Urbach energy shows the significant disordering in Cu₆.₃₅P₁.₇₇S₄.₇₂Br₀.₁₅ thin film.