Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique

Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique

Cu₆.₃₅P₁.₇₇S₄.₇₂Br₀.₁₅ thin film was obtained using the high target utilization sputtering onto c-cut sapphire substrates. X-ray diffraction studies show the film to be amorphous with some crystalline inclusions. SEM investigations indicate formation of periodical “forest-like” quasi-two-dimensional...

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Дата:2016
Автори: Studenyak, I.P., Kutsyk, M.M., Studenyak, V.I., Bendak, A.V., Izai, V.Yu., Kúš, P., Mikula, M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121605
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique / I.P. Studenyak, M.M. Kutsyk, V.I. Studenyak, A.V. Bendak, V.Yu. Izai, P. Kúš, M. Mikula // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 307-310. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1216052017-06-15T03:05:13Z Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique Studenyak, I.P. Kutsyk, M.M. Studenyak, V.I. Bendak, A.V. Izai, V.Yu. Kúš, P. Mikula, M. Cu₆.₃₅P₁.₇₇S₄.₇₂Br₀.₁₅ thin film was obtained using the high target utilization sputtering onto c-cut sapphire substrates. X-ray diffraction studies show the film to be amorphous with some crystalline inclusions. SEM investigations indicate formation of periodical “forest-like” quasi-two-dimensional pillared structure. Electrical conductivity of Cu₆.₃₅P₁.₇₇S₄.₇₂Br₀.₁₅ thin film was measured in the temperature interval 4.5…300 K, three regions with different activation energy were revealed. Optical constants were obtained using the technique of spectroscopic ellipsometry and used for calculation of optical absorption spectrum. Optical absorption edge has an exponential form, the Urbach energy shows the significant disordering in Cu₆.₃₅P₁.₇₇S₄.₇₂Br₀.₁₅ thin film. 2016 Article Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique / I.P. Studenyak, M.M. Kutsyk, V.I. Studenyak, A.V. Bendak, V.Yu. Izai, P. Kúš, M. Mikula // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 307-310. — Бібліогр.: 12 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.03.307 PACS 78.40.Ha, 77.80.Bh http://dspace.nbuv.gov.ua/handle/123456789/121605 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Cu₆.₃₅P₁.₇₇S₄.₇₂Br₀.₁₅ thin film was obtained using the high target utilization sputtering onto c-cut sapphire substrates. X-ray diffraction studies show the film to be amorphous with some crystalline inclusions. SEM investigations indicate formation of periodical “forest-like” quasi-two-dimensional pillared structure. Electrical conductivity of Cu₆.₃₅P₁.₇₇S₄.₇₂Br₀.₁₅ thin film was measured in the temperature interval 4.5…300 K, three regions with different activation energy were revealed. Optical constants were obtained using the technique of spectroscopic ellipsometry and used for calculation of optical absorption spectrum. Optical absorption edge has an exponential form, the Urbach energy shows the significant disordering in Cu₆.₃₅P₁.₇₇S₄.₇₂Br₀.₁₅ thin film.
format Article
author Studenyak, I.P.
Kutsyk, M.M.
Studenyak, V.I.
Bendak, A.V.
Izai, V.Yu.
Kúš, P.
Mikula, M.
spellingShingle Studenyak, I.P.
Kutsyk, M.M.
Studenyak, V.I.
Bendak, A.V.
Izai, V.Yu.
Kúš, P.
Mikula, M.
Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Studenyak, I.P.
Kutsyk, M.M.
Studenyak, V.I.
Bendak, A.V.
Izai, V.Yu.
Kúš, P.
Mikula, M.
author_sort Studenyak, I.P.
title Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique
title_short Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique
title_full Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique
title_fullStr Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique
title_full_unstemmed Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique
title_sort structural, electrical and optical investigations of cu₆ps₅br-based thin film deposited by hitus technique
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2016
url http://dspace.nbuv.gov.ua/handle/123456789/121605
citation_txt Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique / I.P. Studenyak, M.M. Kutsyk, V.I. Studenyak, A.V. Bendak, V.Yu. Izai, P. Kúš, M. Mikula // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 307-310. — Бібліогр.: 12 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:39:52Z
last_indexed 2023-10-18T20:39:52Z
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