Active inductances controlled in GaAs MESFET technology
Two new structures of active inductance which implement MESFET transistors are proposed in this article. The technological parameters of the components of “inductances” are those of 0.8 µm MESFET technology. We expose the advantages of these new structures such as the adjustable character of the val...
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| Дата: | 2006 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121617 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Active inductances controlled in GaAs MESFET technology / M.S. Benbouza, C. Kenzai-Azizi, N. Merabtine, Y. Saidi, S. Amourache // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 44-48. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121617 |
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dspace |
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irk-123456789-1216172017-06-16T03:04:00Z Active inductances controlled in GaAs MESFET technology Benbouza, M.S. Kenzai-Azizi, C. Merabtine, N. Saidi, Y. Amourache, S. Two new structures of active inductance which implement MESFET transistors are proposed in this article. The technological parameters of the components of “inductances” are those of 0.8 µm MESFET technology. We expose the advantages of these new structures such as the adjustable character of the value of the active inductance like their limitation, and we compare them to those of the literature. 2006 Article Active inductances controlled in GaAs MESFET technology / M.S. Benbouza, C. Kenzai-Azizi, N. Merabtine, Y. Saidi, S. Amourache // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 44-48. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 84.37.+q, 85.30. Tv http://dspace.nbuv.gov.ua/handle/123456789/121617 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Two new structures of active inductance which implement MESFET transistors are proposed in this article. The technological parameters of the components of “inductances” are those of 0.8 µm MESFET technology. We expose the advantages of these new structures such as the adjustable character of the value of the active inductance like their limitation, and we compare them to those of the literature. |
| format |
Article |
| author |
Benbouza, M.S. Kenzai-Azizi, C. Merabtine, N. Saidi, Y. Amourache, S. |
| spellingShingle |
Benbouza, M.S. Kenzai-Azizi, C. Merabtine, N. Saidi, Y. Amourache, S. Active inductances controlled in GaAs MESFET technology Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Benbouza, M.S. Kenzai-Azizi, C. Merabtine, N. Saidi, Y. Amourache, S. |
| author_sort |
Benbouza, M.S. |
| title |
Active inductances controlled in GaAs MESFET technology |
| title_short |
Active inductances controlled in GaAs MESFET technology |
| title_full |
Active inductances controlled in GaAs MESFET technology |
| title_fullStr |
Active inductances controlled in GaAs MESFET technology |
| title_full_unstemmed |
Active inductances controlled in GaAs MESFET technology |
| title_sort |
active inductances controlled in gaas mesfet technology |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2006 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121617 |
| citation_txt |
Active inductances controlled in GaAs MESFET technology / M.S. Benbouza, C. Kenzai-Azizi, N. Merabtine, Y. Saidi, S. Amourache // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 44-48. — Бібліогр.: 9 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:39:54Z |
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