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Active inductances controlled in GaAs MESFET technology

Active inductances controlled in GaAs MESFET technology

Two new structures of active inductance which implement MESFET transistors are proposed in this article. The technological parameters of the components of “inductances” are those of 0.8 µm MESFET technology. We expose the advantages of these new structures such as the adjustable character of the val...

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Main Authors: Benbouza, M.S., Kenzai-Azizi, C., Merabtine, N., Saidi, Y., Amourache, S.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/121617
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spelling irk-123456789-1216172017-06-16T03:04:00Z Active inductances controlled in GaAs MESFET technology Benbouza, M.S. Kenzai-Azizi, C. Merabtine, N. Saidi, Y. Amourache, S. Two new structures of active inductance which implement MESFET transistors are proposed in this article. The technological parameters of the components of “inductances” are those of 0.8 µm MESFET technology. We expose the advantages of these new structures such as the adjustable character of the value of the active inductance like their limitation, and we compare them to those of the literature. 2006 Article Active inductances controlled in GaAs MESFET technology / M.S. Benbouza, C. Kenzai-Azizi, N. Merabtine, Y. Saidi, S. Amourache // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 44-48. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 84.37.+q, 85.30. Tv http://dspace.nbuv.gov.ua/handle/123456789/121617 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Two new structures of active inductance which implement MESFET transistors are proposed in this article. The technological parameters of the components of “inductances” are those of 0.8 µm MESFET technology. We expose the advantages of these new structures such as the adjustable character of the value of the active inductance like their limitation, and we compare them to those of the literature.
format Article
author Benbouza, M.S.
Kenzai-Azizi, C.
Merabtine, N.
Saidi, Y.
Amourache, S.
spellingShingle Benbouza, M.S.
Kenzai-Azizi, C.
Merabtine, N.
Saidi, Y.
Amourache, S.
Active inductances controlled in GaAs MESFET technology
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Benbouza, M.S.
Kenzai-Azizi, C.
Merabtine, N.
Saidi, Y.
Amourache, S.
author_sort Benbouza, M.S.
title Active inductances controlled in GaAs MESFET technology
title_short Active inductances controlled in GaAs MESFET technology
title_full Active inductances controlled in GaAs MESFET technology
title_fullStr Active inductances controlled in GaAs MESFET technology
title_full_unstemmed Active inductances controlled in GaAs MESFET technology
title_sort active inductances controlled in gaas mesfet technology
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2006
url http://dspace.nbuv.gov.ua/handle/123456789/121617
citation_txt Active inductances controlled in GaAs MESFET technology / M.S. Benbouza, C. Kenzai-Azizi, N. Merabtine, Y. Saidi, S. Amourache // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 44-48. — Бібліогр.: 9 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT benbouzams activeinductancescontrolledingaasmesfettechnology
AT kenzaiazizic activeinductancescontrolledingaasmesfettechnology
AT merabtinen activeinductancescontrolledingaasmesfettechnology
AT saidiy activeinductancescontrolledingaasmesfettechnology
AT amouraches activeinductancescontrolledingaasmesfettechnology
first_indexed 2023-10-18T20:39:54Z
last_indexed 2023-10-18T20:39:54Z
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