2025-02-22T16:59:35-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121617%22&qt=morelikethis&rows=5
2025-02-22T16:59:35-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121617%22&qt=morelikethis&rows=5
2025-02-22T16:59:35-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-22T16:59:35-05:00 DEBUG: Deserialized SOLR response
Active inductances controlled in GaAs MESFET technology

Active inductances controlled in GaAs MESFET technology

Two new structures of active inductance which implement MESFET transistors are proposed in this article. The technological parameters of the components of “inductances” are those of 0.8 µm MESFET technology. We expose the advantages of these new structures such as the adjustable character of the val...

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Bibliographic Details
Main Authors: Benbouza, M.S., Kenzai-Azizi, C., Merabtine, N., Saidi, Y., Amourache, S.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/121617
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2025-02-22T16:59:35-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121617%22&qt=morelikethis
2025-02-22T16:59:35-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121617%22&qt=morelikethis
2025-02-22T16:59:35-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-22T16:59:35-05:00 DEBUG: Deserialized SOLR response

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