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Disappearance of aligning properties of deposited SiOx films as caused by external factors

Disappearance of aligning properties of deposited SiOx films as caused by external factors

Thermal and degradation stability of SiOx aligning films deposited by cathode reactive sputtering (CRS) in glow discharge plasma were investigated. It was shown that a heat treatment and other external factors initiate transformations on the surface of aligning film and provided new conditions at th...

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Bibliographic Details
Main Authors: Kolomzarov, Yu., Oleksenko, P., Sorokin, V., Tytarenko, P., Zelinskyy, R.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/121620
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http://dspace.nbuv.gov.ua/handle/123456789/121620

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