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Disappearance of aligning properties of deposited SiOx films as caused by external factors
Thermal and degradation stability of SiOx aligning films deposited by cathode reactive sputtering (CRS) in glow discharge plasma were investigated. It was shown that a heat treatment and other external factors initiate transformations on the surface of aligning film and provided new conditions at th...
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| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/121620 |
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irk-123456789-1216202017-06-16T03:04:00Z Disappearance of aligning properties of deposited SiOx films as caused by external factors Kolomzarov, Yu. Oleksenko, P. Sorokin, V. Tytarenko, P. Zelinskyy, R. Thermal and degradation stability of SiOx aligning films deposited by cathode reactive sputtering (CRS) in glow discharge plasma were investigated. It was shown that a heat treatment and other external factors initiate transformations on the surface of aligning film and provided new conditions at the interface. This leads to a change of slight axis orientation direction of LC molecules and appearance of various defects in the LC aligned structures. The technological ways to increase the aligning layer durability under influence of external factors were proposed. 2006 Article Disappearance of aligning properties of deposited SiOx films as caused by external factors / Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 60-65. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 61.30.Gd, 81.65.Cf, 61.25.Em http://dspace.nbuv.gov.ua/handle/123456789/121620 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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| description |
Thermal and degradation stability of SiOx aligning films deposited by cathode reactive sputtering (CRS) in glow discharge plasma were investigated. It was shown that a heat treatment and other external factors initiate transformations on the surface of aligning film and provided new conditions at the interface. This leads to a change of slight axis orientation direction of LC molecules and appearance of various defects in the LC aligned structures. The technological ways to increase the aligning layer durability under influence of external factors were proposed. |
| format |
Article |
| author |
Kolomzarov, Yu. Oleksenko, P. Sorokin, V. Tytarenko, P. Zelinskyy, R. |
| spellingShingle |
Kolomzarov, Yu. Oleksenko, P. Sorokin, V. Tytarenko, P. Zelinskyy, R. Disappearance of aligning properties of deposited SiOx films as caused by external factors Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Kolomzarov, Yu. Oleksenko, P. Sorokin, V. Tytarenko, P. Zelinskyy, R. |
| author_sort |
Kolomzarov, Yu. |
| title |
Disappearance of aligning properties of deposited SiOx films as caused by external factors |
| title_short |
Disappearance of aligning properties of deposited SiOx films as caused by external factors |
| title_full |
Disappearance of aligning properties of deposited SiOx films as caused by external factors |
| title_fullStr |
Disappearance of aligning properties of deposited SiOx films as caused by external factors |
| title_full_unstemmed |
Disappearance of aligning properties of deposited SiOx films as caused by external factors |
| title_sort |
disappearance of aligning properties of deposited siox films as caused by external factors |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2006 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121620 |
| citation_txt |
Disappearance of aligning properties of deposited SiOx films as caused by external factors / Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 60-65. — Бібліогр.: 13 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT kolomzarovyu disappearanceofaligningpropertiesofdepositedsioxfilmsascausedbyexternalfactors AT oleksenkop disappearanceofaligningpropertiesofdepositedsioxfilmsascausedbyexternalfactors AT sorokinv disappearanceofaligningpropertiesofdepositedsioxfilmsascausedbyexternalfactors AT tytarenkop disappearanceofaligningpropertiesofdepositedsioxfilmsascausedbyexternalfactors AT zelinskyyr disappearanceofaligningpropertiesofdepositedsioxfilmsascausedbyexternalfactors |
| first_indexed |
2023-10-18T20:39:54Z |
| last_indexed |
2023-10-18T20:39:54Z |
| _version_ |
1796150791591952384 |