Screen-printed p-CdTe layers for CdS/CdTe solar cells
Correlation of the recrystallization process technological parameters with the morphology and structure of screen-printed p-CdTe layers intended for CdS/CdTe solar cell fabrication has been established. The optimal regimes to form layers with required characteristics have been found. As distinct fro...
Збережено в:
| Дата: | 2005 |
|---|---|
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121646 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Screen-printed p-CdTe layers for CdS/CdTe solar cells / V.P. Klad'ko, P.M. Lytvyn, N.M. Osipyonok, G.S. Pekar, I.V. Prokopenko, A.F. Singaevsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 2. — С. 61-65. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121646 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1216462017-06-16T03:04:04Z Screen-printed p-CdTe layers for CdS/CdTe solar cells Klad'ko, V.P. Lytvyn, P.M. Osipyonok, N.M. Pekar, G.S. Prokopenko, I.V. Singaevsky, A.F. Correlation of the recrystallization process technological parameters with the morphology and structure of screen-printed p-CdTe layers intended for CdS/CdTe solar cell fabrication has been established. The optimal regimes to form layers with required characteristics have been found. As distinct from the used previously screen-printing techniques for CdS/CdTe solar cell fabrication, CdTe layers were doped with Ag or Au not by their diffusion from the layer surface but in the course of layer preparation. For this purpose, tellurides of those metals were added into the raw paste used for CdTe screen printing. It is shown that the developed method has some advantages and allows to prepare CdTe films, structural and electrophysical parameters of which are suitable to fabricate CdS/CdTe solar cells. 2005 Article Screen-printed p-CdTe layers for CdS/CdTe solar cells / V.P. Klad'ko, P.M. Lytvyn, N.M. Osipyonok, G.S. Pekar, I.V. Prokopenko, A.F. Singaevsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 2. — С. 61-65. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 68.35.Bs, 61.10.Nz, 61.72.Cc http://dspace.nbuv.gov.ua/handle/123456789/121646 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Correlation of the recrystallization process technological parameters with the morphology and structure of screen-printed p-CdTe layers intended for CdS/CdTe solar cell fabrication has been established. The optimal regimes to form layers with required characteristics have been found. As distinct from the used previously screen-printing techniques for CdS/CdTe solar cell fabrication, CdTe layers were doped with Ag or Au not by their diffusion from the layer surface but in the course of layer preparation. For this purpose, tellurides of those metals were added into the raw paste used for CdTe screen printing. It is shown that the developed method has some advantages and allows to prepare CdTe films, structural and electrophysical parameters of which are suitable to fabricate CdS/CdTe solar cells. |
| format |
Article |
| author |
Klad'ko, V.P. Lytvyn, P.M. Osipyonok, N.M. Pekar, G.S. Prokopenko, I.V. Singaevsky, A.F. |
| spellingShingle |
Klad'ko, V.P. Lytvyn, P.M. Osipyonok, N.M. Pekar, G.S. Prokopenko, I.V. Singaevsky, A.F. Screen-printed p-CdTe layers for CdS/CdTe solar cells Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Klad'ko, V.P. Lytvyn, P.M. Osipyonok, N.M. Pekar, G.S. Prokopenko, I.V. Singaevsky, A.F. |
| author_sort |
Klad'ko, V.P. |
| title |
Screen-printed p-CdTe layers for CdS/CdTe solar cells |
| title_short |
Screen-printed p-CdTe layers for CdS/CdTe solar cells |
| title_full |
Screen-printed p-CdTe layers for CdS/CdTe solar cells |
| title_fullStr |
Screen-printed p-CdTe layers for CdS/CdTe solar cells |
| title_full_unstemmed |
Screen-printed p-CdTe layers for CdS/CdTe solar cells |
| title_sort |
screen-printed p-cdte layers for cds/cdte solar cells |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2005 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121646 |
| citation_txt |
Screen-printed p-CdTe layers for CdS/CdTe solar cells / V.P. Klad'ko, P.M. Lytvyn, N.M. Osipyonok, G.S. Pekar, I.V. Prokopenko, A.F. Singaevsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 2. — С. 61-65. — Бібліогр.: 8 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT kladkovp screenprintedpcdtelayersforcdscdtesolarcells AT lytvynpm screenprintedpcdtelayersforcdscdtesolarcells AT osipyonoknm screenprintedpcdtelayersforcdscdtesolarcells AT pekargs screenprintedpcdtelayersforcdscdtesolarcells AT prokopenkoiv screenprintedpcdtelayersforcdscdtesolarcells AT singaevskyaf screenprintedpcdtelayersforcdscdtesolarcells |
| first_indexed |
2023-10-18T20:39:58Z |
| last_indexed |
2023-10-18T20:39:58Z |
| _version_ |
1796150794346561536 |