Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals von Klad'ko, V. P., Grigoriev, D.O., Datsenko, L.I., Machulin, V.F., Prokopenko, I.V.

Volltext

Screen-printed p-CdTe layers for CdS/CdTe solar cells von Klad'ko, V.P., Lytvyn, P.M., Osipyonok, N.M., Pekar, G.S., Prokopenko, I.V., Singaevsky, A.F.

Volltext

Recrystallization processes in screen-printed CdS films von Klad’ko, V.P., Lytvyn, O.S., Lytvyn, P.M., Osipenok, N.M., Pekar, G.S., Prokopenko, I.V., Singaevsky, A.F., Korchevoy, A.A.

Volltext

Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers von Semenova, G.N., Venger, E.F., Korsunska, N.O., Klad’ko, V.P., Borkovska, L.V., Semtsiv, M.P., Sharibaev, M.B., Kushnirenko, V.I., Sadofyev, Yu.G.

Volltext

On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes von Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Milenin, V.V., Sveshnikov, Yu.N., Sheremet, V.N.

Volltext

Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing von Datsenko, L.I., Auleytner, J., Misiuk, A., Klad'ko, V.P., Machulin, V.F., Bak-Misiuk, J., Zymierska, D., Antonova, I.V., Melnyk, V.M., Popov, V.P., Czosnyka, T., Choinski, J.

Volltext

Dynamical Theory of Triple-Crystal X-ray Diffractometry and Characterization of Microdefects and Strains in Imperfect Single Crystals von Molodkin, V.B., Olikhovskii, S.I., Len, E.G., Kyslovskyy, Ye.M., Reshetnyk, O.V., Vladimirova, T.P., Sheludchenko, B.V., Skakunova, E.S., Lizunov, V.V., Kochelab, E.V., Fodchuk, I.M., Klad’ko, V.P.

Volltext

Role of dislocations in formation of ohmic contacts to heavily doped n-Si von Belyaev, A.E., Pilipenko, V.A., Anischik, V.M., Petlitskaya, T.V., Klad’ko, V.P., Konakova, R.V., Boltovets, N.S., Korostinskaya, T.V., Kapitanchuk, L.M., Kudryk, Ya.Ya., Vinogradov, A.O., Sheremet, V.N.

Volltext

Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density von Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Zhilyaev, Yu.V., Kapitanchuk, L.M., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Naumov, A.V., Panteleev, V.V., Sheremet, V.N.

Volltext

Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts von Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Kapitanchuk, L.M., Klad’ko, V.P., Konakova, R.V., Kuchuk, A.V., Korostinskay, T.V., Pilipchuk, A.S., Sheremet, V.N., Mazur, Yu.I., Ware, M.E., Salamo, G.J.

Volltext