Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals за авторством Klad'ko, V. P., Grigoriev, D.O., Datsenko, L.I., Machulin, V.F., Prokopenko, I.V.

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Screen-printed p-CdTe layers for CdS/CdTe solar cells за авторством Klad'ko, V.P., Lytvyn, P.M., Osipyonok, N.M., Pekar, G.S., Prokopenko, I.V., Singaevsky, A.F.

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Recrystallization processes in screen-printed CdS films за авторством Klad’ko, V.P., Lytvyn, O.S., Lytvyn, P.M., Osipenok, N.M., Pekar, G.S., Prokopenko, I.V., Singaevsky, A.F., Korchevoy, A.A.

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Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers за авторством Semenova, G.N., Venger, E.F., Korsunska, N.O., Klad’ko, V.P., Borkovska, L.V., Semtsiv, M.P., Sharibaev, M.B., Kushnirenko, V.I., Sadofyev, Yu.G.

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On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes за авторством Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Milenin, V.V., Sveshnikov, Yu.N., Sheremet, V.N.

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Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing за авторством Datsenko, L.I., Auleytner, J., Misiuk, A., Klad'ko, V.P., Machulin, V.F., Bak-Misiuk, J., Zymierska, D., Antonova, I.V., Melnyk, V.M., Popov, V.P., Czosnyka, T., Choinski, J.

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Dynamical Theory of Triple-Crystal X-ray Diffractometry and Characterization of Microdefects and Strains in Imperfect Single Crystals за авторством Molodkin, V.B., Olikhovskii, S.I., Len, E.G., Kyslovskyy, Ye.M., Reshetnyk, O.V., Vladimirova, T.P., Sheludchenko, B.V., Skakunova, E.S., Lizunov, V.V., Kochelab, E.V., Fodchuk, I.M., Klad’ko, V.P.

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Role of dislocations in formation of ohmic contacts to heavily doped n-Si за авторством Belyaev, A.E., Pilipenko, V.A., Anischik, V.M., Petlitskaya, T.V., Klad’ko, V.P., Konakova, R.V., Boltovets, N.S., Korostinskaya, T.V., Kapitanchuk, L.M., Kudryk, Ya.Ya., Vinogradov, A.O., Sheremet, V.N.

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Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density за авторством Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Zhilyaev, Yu.V., Kapitanchuk, L.M., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Naumov, A.V., Panteleev, V.V., Sheremet, V.N.

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Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts за авторством Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Kapitanchuk, L.M., Klad’ko, V.P., Konakova, R.V., Kuchuk, A.V., Korostinskay, T.V., Pilipchuk, A.S., Sheremet, V.N., Mazur, Yu.I., Ware, M.E., Salamo, G.J.

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