Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals by Klad'ko, V. P., Grigoriev, D.O., Datsenko, L.I., Machulin, V.F., Prokopenko, I.V.

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Screen-printed p-CdTe layers for CdS/CdTe solar cells by Klad'ko, V.P., Lytvyn, P.M., Osipyonok, N.M., Pekar, G.S., Prokopenko, I.V., Singaevsky, A.F.

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Recrystallization processes in screen-printed CdS films by Klad’ko, V.P., Lytvyn, O.S., Lytvyn, P.M., Osipenok, N.M., Pekar, G.S., Prokopenko, I.V., Singaevsky, A.F., Korchevoy, A.A.

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Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers by Semenova, G.N., Venger, E.F., Korsunska, N.O., Klad’ko, V.P., Borkovska, L.V., Semtsiv, M.P., Sharibaev, M.B., Kushnirenko, V.I., Sadofyev, Yu.G.

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On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Milenin, V.V., Sveshnikov, Yu.N., Sheremet, V.N.

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Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing by Datsenko, L.I., Auleytner, J., Misiuk, A., Klad'ko, V.P., Machulin, V.F., Bak-Misiuk, J., Zymierska, D., Antonova, I.V., Melnyk, V.M., Popov, V.P., Czosnyka, T., Choinski, J.

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Dynamical Theory of Triple-Crystal X-ray Diffractometry and Characterization of Microdefects and Strains in Imperfect Single Crystals by Molodkin, V.B., Olikhovskii, S.I., Len, E.G., Kyslovskyy, Ye.M., Reshetnyk, O.V., Vladimirova, T.P., Sheludchenko, B.V., Skakunova, E.S., Lizunov, V.V., Kochelab, E.V., Fodchuk, I.M., Klad’ko, V.P.

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Role of dislocations in formation of ohmic contacts to heavily doped n-Si by Belyaev, A.E., Pilipenko, V.A., Anischik, V.M., Petlitskaya, T.V., Klad’ko, V.P., Konakova, R.V., Boltovets, N.S., Korostinskaya, T.V., Kapitanchuk, L.M., Kudryk, Ya.Ya., Vinogradov, A.O., Sheremet, V.N.

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Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density by Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Zhilyaev, Yu.V., Kapitanchuk, L.M., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Naumov, A.V., Panteleev, V.V., Sheremet, V.N.

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Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts by Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Kapitanchuk, L.M., Klad’ko, V.P., Konakova, R.V., Kuchuk, A.V., Korostinskay, T.V., Pilipchuk, A.S., Sheremet, V.N., Mazur, Yu.I., Ware, M.E., Salamo, G.J.

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